Device physics of indoor photovoltaics: A fundamental investigation

Z Zhouqing Wei (Beijing National Laboratory for Molecular Sciences (BNLMS) Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China) X Xin Wen W Wenbo Lu X Xiaoyan An (The State Key Laboratory of Physical Chemistry of Solid Surfaces, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, and College of Chemistry and Chemical Engineering, Xiamen University 1 , Xiamen, Fujian 361005,) Q Qingxiang Liu Y Yunpei Zhang D Di Wu H Huan Yang J Jin-Song Hu (Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry) D Ding-Jiang Xue

Abstract

Indoor photovoltaics (IPVs) have recently attracted considerable attention due to their ability to harvest indoor light to power Internet of Things (IoT) devices. However, in contrast to the well-established device physics of solar cells, research on IPV device physics remains limited, hindering the development of this emerging field. Here, we apply the Shockley–Queisser (SQ) theory to systematically investigate the device physics of IPVs. Through the comparative analysis of spectral differences between standard sunlight and indoor light sources, we calculate the SQ-limited short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) as functions of the absorber material's bandgap. We reveal that Jsc exhibits a linear dependence on illuminance; Voc remains nearly constant across varying illumination levels; and FF necessitates a large shunt resistance to retain high values. Based on these PV parameters, we finally calculated the SQ-limited power conversion efficiency (PCE), demonstrating an optimal bandgap range of 1.8–1.9 eV for IPVs, which achieves a PCE limit of approximately 55%.

Article Details

Volume / Issue Vol. 127, Issue 19
Published November 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

Z

Zhouqing Wei

Beijing National Laboratory for Molecular Sciences (BNLMS) Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

X

Xin Wen

W

Wenbo Lu

X

Xiaoyan An

The State Key Laboratory of Physical Chemistry of Solid Surfaces, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, and College of Chemistry and Chemical Engineering, Xiamen University 1 , Xiamen, Fujian 361005,

Q

Qingxiang Liu

Y

Yunpei Zhang

D

Di Wu

H

Huan Yang

J

Jin-Song Hu

Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry

D

Ding-Jiang Xue