Applied Physics Letters
Articles in this Issue
Dynamic correlation between surface states and exciton in perovskite nanocrystals growth and ligand binding
Colloidal lead halide perovskite (LHP) nanocrystals have attracted considerable interest in optoelectronics due to their exceptional photoelectric properties, yet quantifying the effect of nanocrystal...
Persistent incommensurate charge density wave in chalcogen-disordered 1 <i>T</i> -TaSeTe
Charge density waves (CDWs) are a canonical interaction-driven electronic phenomenon with potential technological applications, such as collective electronic switching and local information storage. H...
High-performance long-wavelength infrared photodetector based on M-structure InAs/GaSb type-II superlattices
A high-performance long-wavelength infrared photodetector based on M-structure type-II superlattices was developed by optimizing the device structure and operating conditions. The detector exhibits a...
A kind of carbon-based composites with both high heat conductivity and absorption capacity
With the rapid increase in power density of electronics, the demands for high-performance thermal management materials have become more and more urgent. The good performance of both heat transfer and...
The study of thermal fluctuations in microwave and mechanical resonators
We report high-resolution measurements of thermal fluctuations in microwave and mechanical resonators using a dual-channel readout system. The latter comprises a low-noise amplifier, an I/Q-mixer, and...
Strain engineering of intrinsic multiferroic coupling in bilayer ScI2
Two-dimensional (2D) sliding ferroelectrics have emerged as promising candidates for next-generation nonvolatile memory technologies. However, integrating magnetic, ferroelectric, and ferrovalley prop...
Revisiting the epitaxial Si3N4 crystalline cap on AlGaN/GaN via evolutionary structure search
In our recent experimental work [Luo et al., Appl. Phys. Lett. 125, 122109 (2024)], we observed that crystalline Si3N4 cap layers, a few nanometers thick, can form in situ on GaN surfaces. Compared wi...
High gain Ga2O3/GaN avalanche photodetector with separated absorption and multiplication structure
The β-Ga2O3/p-GaN heterojunction avalanche photodetector (APD) with separated absorption and multiplication (SAM) structure was fabricated by metal–organic chemical vapor deposition. Through x-ray dif...
Switching dynamics of oxygen-vacancy memristors based on cuprate superconductors
Resistive switching phenomena have attracted increased attention over the years because of their technological relevance, particularly for applications like nonvolatile memories and memristors, which...
Strain-induced polarization of AlN/GaN heterointerfaces enabling ultra-high 2DEG densities
The strong polarization fields present at the AlN/GaN heterointerface make them an attractive candidate for the development of high electron mobility transistors (HEMTs) with high current densities. I...
Modulating Chern number of spin- <i>J</i> model with the superconducting qudit
Superconducting circuits, owing to their high tunability, provide a controllable platform for studying topological systems that are difficult to manipulate in natural materials. The topological proper...
In-plane anomalous Hall effect and unconventional spin-to-charge conversion in Co/PtCoOx heterostructures
We demonstrate in-plane anomalous Hall effect (iAHE) and unconventional spin-to-charge conversion in in-plane Co/PtCoOx heterostructures grown by magnetron sputtering. The temperature-dependent measur...
Tri-terminal IGZO optoelectronic synapse with photoelectric co-modulation for neuromorphic computing
Optoelectronic synaptic devices show great promise for neuromorphic computing (NC), offering high-speed and energy-efficient information processing. This study explores the potential of indium gallium...
Geometric symmetry breaking of current distribution enables field-free programmable spin logic in T-shaped architecture
Achieving fully electrical and easily integrated programmable spin logic within a single device using spin–orbit torque (SOT)-driven perpendicular magnetization switching (PMS) remains a key challenge...
Influence of Bi surfactant on tetrahedral N interstitial formation and optoelectronic properties of dilute GaAsN alloys
Dilute nitride semiconductor alloys are attractive for near- to mid-IR optoelectronic applications but their widespread implementation is hindered by efficiency-limiting non-substitutional N incorpora...
Revealing phonon signature of dislocations in silicon carbide using machine-learning interatomic potential
Defects are the main performance killer in silicon carbide (SiC) power devices. Among various defect types, dislocations are particularly important, as they affect device reliability. However, first-p...
Improving efficiency and water–oxygen barrier of perovskite solar cells through phenylalanine additives
Perovskite solar cells (PSCs) show strong potential in the photovoltaic field, but their limited material stability hinders industrial-scale application. Major challenges include degradation of the pe...
Spin-splitting-torque-driven field-free perpendicular magnetization switching in RuO2/synthetic antiferromagnet heterostructures for spintronic convolutional neural networks
With the growing demand for low-power and high-speed spintronic devices, the development of advanced material systems with efficient spin control capabilities has emerged as a central focus in spintro...
Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer
The significant optimization of electric field distribution for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with a thick i-GaN cap layer is reported. The thick...
<i>In situ</i> construction of porous ZnO layer with more exposed (002) polar facets toward long-cycling zinc metal anodes
The presence of high theoretical capacity, superior safety, and cost-effectiveness makes aqueous zinc-ion batteries (AZIBs) an attractive option for various applications. However, the extensive growth...
In situ nanoscale insights into the piezoresponse in ferroelectric composite fiber
PVDF-based nanocomposites with robust piezoelectric response have attracted significant attention, yet a full understanding of the molecular-level interactions between PVDF and nanofillers remains cha...
A perspective on inelastic light scattering spectroscopy for probing transport of collective acoustic excitations
Understanding and manipulating nanoscale energy transport and conversion processes are essential for diverse applications, ranging from thermoelectrics and energy harvesting to thermal management of m...
Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow
Gallium nitride is increasingly recognized as a leading material for power and radio frequency applications, due to its unique electronic properties. However, the phenomenon of wafer bow and warpage d...