Influence of Bi surfactant on tetrahedral N interstitial formation and optoelectronic properties of dilute GaAsN alloys
Abstract
Dilute nitride semiconductor alloys are attractive for near- to mid-IR optoelectronic applications but their widespread implementation is hindered by efficiency-limiting non-substitutional N incorporation. Although epitaxy in the presence of surfactants has been reported to increase photoluminescence (PL) emission intensity, the impact of surfactants on N incorporation mechanisms and the resulting optoelectronic properties remains unknown. In this work, we examine the influence of a Bi surfactant on non-substitutional N incorporation and the optoelectronic properties of dilute GaAs1−xNx alloy films. For GaAs1−xNx alloy films grown with a Bi surfactant, tetrahedral N interstitial (Ntetra) formation is suppressed while the near-band edge PL emission intensity is increased, deep-level PL emission intensity is decreased, and broadening of the photoreflectance resonance is reduced. We discuss the role of the Bi surfactant-induced surface reconstruction transformation on the suppression of Ntetra incorporation, as well as its impact on key optoelectronic properties that are applicable to a variety of highly mismatched alloys.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Joshua J. P. Cooper
Department of Materials Science and Engineering, University of Michigan 1 , Ann Arbor, Michigan 48109,
Jared W. Mitchell
Department of Physics, University of Michigan 2 , Ann Arbor, Michigan 48109,
Yury Turkulets
W. M. Linhart
Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology 3 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław,
Or Haim Chaulker
R. Kudrawiec
Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology 3 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław,
Ilan Shalish
Rachel S. Goldman
Department of Materials Science and Engineering, University of Michigan 1 , Ann Arbor, Michigan 48109,