High-performance long-wavelength infrared photodetector based on M-structure InAs/GaSb type-II superlattices

H Hui Xie D Dongwei Jiang (State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) X Xiangyu Zhang Y Ye Zhang Y Yaqi Zhao (State key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) F Feng Gao C Chen Li (Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.) W Wen He (New Cornerstone Science Laboratory, MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry) X Xiangqun Chen (School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001,) H Hongyue Hao (State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) D Donghai Wu G Guowei Wang (Ordos Laboratory) Y Yingqiang Xu (State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) X Xiaoning Guan (School of Integrated Circuits, Beijing University of Posts and Telecommunications 4 , Beijing 100876,) G Gang Liu D Dongbo Wang Z Zhichuan Niu

Abstract

A high-performance long-wavelength infrared photodetector based on M-structure type-II superlattices was developed by optimizing the device structure and operating conditions. The detector exhibits a spectral response range of 3–12.5 μm, with a peak response of 4.73 A/W observed at 5.2 μm and 3.06 A/W at 8.1 μm. The quantum efficiency at 8 μm reaches approximately 50%. Notably, the response remains relatively constant under no bias or reverse bias. At an applied bias voltage of 10 mV, the detector's specific detectivity reached 3.62 × 1010 and 3.63 × 1010 cm·Hz0.5/W at 8 and 10 μm, respectively, demonstrating excellent detection capability in the long-wavelength range. Furthermore, D* remains above 1 × 1010 cm·Hz0.5/W for a bias voltage below 50 mV, demonstrating the detector's stability under low-bias conditions.

Article Details

Volume / Issue Vol. 127, Issue 24
Published December 15, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (17)

H

Hui Xie

D

Dongwei Jiang

State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

X

Xiangyu Zhang

Y

Ye Zhang

Y

Yaqi Zhao

State key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

F

Feng Gao

C

Chen Li

Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.

W

Wen He

New Cornerstone Science Laboratory, MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry

X

Xiangqun Chen

School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001,

H

Hongyue Hao

State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

D

Donghai Wu

G

Guowei Wang

Ordos Laboratory

Y

Yingqiang Xu

State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

X

Xiaoning Guan

School of Integrated Circuits, Beijing University of Posts and Telecommunications 4 , Beijing 100876,

G

Gang Liu

D

Dongbo Wang

Z

Zhichuan Niu