Applied Physics Letters

Vol. 128, Issue 6 Issue 6 2026
53
Articles

Articles in this Issue

Tuning the phonon dynamics via Sn-resonant impurities assists strong anharmonicity in <i>p</i> -type Zintl Mg3Sb2

S. Priyadharshini, V. Vijay, J. Archana et al. Feb 09, 2026 10.1063/5.0310517

Mg3Sb2-based Zintl compounds are promising p-type thermoelectric (TE) materials with a hexagonal crystal structure and are considered promising candidates due to their abundance in nature, low cost, a...

Lattice strain conversion suppresses ion migration to stabilize wide-bandgap perovskite solar cells

Yaru Du, Shanshan Du, Xiaobo Zhang et al. Feb 09, 2026 10.1063/5.0311771

High-performance, stable wide-bandgap perovskite solar cells (WBG-PSCs) are crucial for advancing the commercialization of perovskite photovoltaic technology. Nonetheless, intrinsic perovskite imperfe...

Harnessing radiation-induced fluctuations in spintronic neuromorphic hardware for energy-efficient aerospace computing

Yifan Zhang, Zhihao Zhao, Xinying Wang et al. Feb 09, 2026 10.1063/5.0303307

The integration of artificial intelligence into space systems faces fundamental challenges in radiation resilience and energy-efficient computation. Here, we present a neuromorphic computing approach...

Modulating self-heating effects in FinFETs through doping engineering

Chenkun Deng, Zhenglai Tang, Yang Shen et al. Feb 09, 2026 10.1063/5.0309190

While FinFETs are widely adopted in advanced nodes for high-performance integration, their elevated power density induces pronounced self-heating effects that pose significant challenges to device rel...

Tuning and suppression of YIG magnetization dynamics via antiferromagnetic interface coupling

Oscar Cespedes, Hari B. Vasili, Matthew Rogers et al. Feb 09, 2026 10.1063/5.0304917

The magnetization dynamics of yttrium iron garnet (Y3Fe5O12, YIG) are key to the operation of spintronic and microwave devices. Here, we report a pathway to manipulate the frequency, damping, and abso...

Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs

Navya Sri Garigapati, Adamantia Logotheti, Byeongchan So et al. Feb 09, 2026 10.1063/5.0309620

We have demonstrated gate resistance thermometry (GRT) measurements to determine the channel temperature in fully vertical AlGaN (2.5%) FinFETs with different fin widths (Wfin = 200, 300, and 400 nm)....

An information-matching approach to optimal experimental design and active learning

Yonatan Kurniawan, Tracianne B. Neilsen, Benjamin L. Francis et al. Feb 09, 2026 10.1063/5.0296026

The efficacy of mathematical models heavily depends on the quality of the training data, yet collecting sufficient data is often expensive and challenging. Many modeling applications require inferring...

Ligand-stripping approach to modulate carrier transport in a bilayer structure achieving charge balance for efficient and stable quantum dot light-emitting diodes

Jaejun Chang, Moon Gyu Han, Ji Hyun Min et al. Feb 09, 2026 10.1063/5.0302699

Charge balance is a decisive factor for the efficiency and operational stability of blue quantum dot light-emitting diodes (QD-LEDs). In these devices, electron transport is typically excessive relati...

Spin–orbit coupling signatures in polycrystalline bismuth thin films

Subhransu Kumar Negi, Rajib Sarkar, Sohini Guin et al. Feb 09, 2026 10.1063/5.0315719

Bismuth is recognized as one of the elemental solids with the strongest intrinsic spin–orbit coupling (SOC) and is widely used to induce topological characteristics in hetero-structures, particularly...

Dynamics of ferroelectric switching in copolymer P(VDF-TrFE) films: Evidence for nanoscale monodomain structure

Xiaojing Zhu, Giuseppe Viola, Haixue Yan et al. Feb 09, 2026 10.1063/5.0307370

The mechanisms of ferroelectric switching in ferroelectric polymers have been the focus of many detailed investigations, but several aspects remain unclear. In the present work, the dynamics of switch...

Unveiling the role of grain boundaries in driving in-plane conductive filament formation in MoS2 neuromorphic devices

Jisheng Sun, Baolong Wang, Jianshi Sun et al. Feb 09, 2026 10.1063/5.0302223

The growing demand for energy-efficient artificial intelligence systems has driven the exploration of neuromorphic devices that mimic the human brain's synaptic behavior. Among various materials inves...

Giant Rashba spin splitting for circular photogalvanic effect in wafer-scale lead sulfide thin film

Xianjing Zhang, Wei Ke, Yan Lu et al. Feb 09, 2026 10.1063/5.0312033

The spin degree of freedom of charge carriers provides an effective way to expand the functionality of conventional electronic devices. In this work, based on density functional theory, we discover gi...

High-order harmonics generation in MoS2 nanosheets in the presence of CdSe and CdSe/V2O5 quantum dots

Srinivasa Rao Konda, Puspendu Barik, Sushma Kumari et al. Feb 09, 2026 10.1063/5.0313492

Engineering nonlinear optical responses in two-dimensional materials via heterostructure design is emerging as a powerful approach for next-generation photonic devices. Although perturbative nonlinear...

Reduction of magnetoelastic constant B2 in Fe thin films by nitrogen implantation, as determined by surface acoustic waves

A. Sharma, L. Christienne, F. Millo et al. Feb 09, 2026 10.1063/5.0289237

This article presents an original approach to both modify and measure the magnetoelastic coupling constant B2 in epitaxial nitrogen-implanted Fe thin films presenting the α′−Fe8N1−x phase. Once the ma...

Ultralow contact resistance of 0.058 Ω mm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors

Kohei Ueno, Kaito Fujisawa, Hiroshi Fujioka Feb 09, 2026 10.1063/5.0311448

Regrown nonalloyed ohmic contacts for AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated using low-temperature pulsed sputtering deposition (PSD) of highly Si-doped degenerate GaN (d...

Tunable quantum layer spin Hall effect in bilayer altermagnetic Nb2SeTeO

Hang Shi, Yuqian Jiang, Yuping Tian et al. Feb 09, 2026 10.1063/5.0312073

Two-dimensional altermagnets have recently gained attention for enabling spin-polarized transport without net magnetization. The van der Waals layered form introduces an additional layer degree of fre...

Strong squeezing and perfect one-way EPR steering in electro-optomechanical system

Qing-Min Zeng, A-Peng Liu, Qi Guo Feb 09, 2026 10.1063/5.0298857

An integrated platform that can generate multiple quantum resources on demand plays a key role in quantum information processing. Here, we study a three-mode electro-optomechanical system in which a m...

Mode-selective control in broadband stimulated Raman spectroscopy via chirped-gated detection

Cong Gao, Jiazhe Sun, Jiayi Jiang et al. Feb 09, 2026 10.1063/5.0308365

Conventional narrowband femtosecond stimulated Raman spectroscopy (SRS) implementations often rely on complex optical parametric systems or static narrowband filters, limiting vibrational mode tunabil...

Enhanced ferroelectric endurance in ScAlN by interfacial oxide reconstruction

Wonseok Lee, Rui Wang, Haotian Ye et al. Feb 09, 2026 10.1063/5.0305289

Scandium-alloyed aluminum nitride (ScAlN) has emerged as a promising ferroelectric material for next-generation electronics, optoelectronics, photonics, and acoustics due to its high remanent polariza...

Real-time evolution of performance in <i>β</i> -Ga2O3 Schottky barrier diodes under on-state stress

Maolin Zhang, Yingxu Wang, Hengyu Zhang et al. Feb 09, 2026 10.1063/5.0309261

β-Ga2O3 is rapidly emerging as a leading material for next-generation high-power electronic devices due to its exceptional material properties, such as a high breakdown field and a superior Baliga's f...

Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson junctions

Han Gao, Jian-Huan Wang, Ji-Yin Wang et al. Feb 09, 2026 10.1063/5.0302926

We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy and Josephson...

Persistent spin texture protected by the approximate symmetry in a weakly interacting graphene/WTe2 heterostructure

Przemysław Przybysz, Karma Tenzin, Berkay Kilic et al. Feb 09, 2026 10.1063/5.0301803

Crystal symmetries in solids give rise to spin–momentum locking, which determines how an electron's spin orientation depends on its momentum. This relationship, often referred to as spin texture, infl...

Spin accumulation based deep MOKE microscopy

J. C. Rodriguez E., H. Grisk, A. Anadón et al. Feb 09, 2026 10.1063/5.0312055

Magnetic imaging techniques are widespread critical tools used in fields such as magnetism, spintronics, or even superconductivity. Among them, one of the most versatile methods is the magneto-optical...

Low-temperature growth of environmentally stable epitaxial VO2 thin films

Rajnarayan De, C. Kar, Kiran Baraik et al. Feb 09, 2026 10.1063/5.0314171

The requirement of substantially higher growth temperature and post-deposition annealing for epitaxial growth of vanadium oxide (VO2) films has always remained a bottleneck for their practical applica...

A field-deployable compact gravimeter based on a grating magneto-optical trap with μGal-level long-term stability

Sangwon Seo, Hyun-Gue Hong, Jae-Hoon Lee et al. Feb 09, 2026 10.1063/5.0307253

We present a compact quantum gravimeter based on a grating magneto-optical trap using 87Rb atoms that achieves μGal-level long-term stability without passive vibration isolation. The sensor head integ...

All Issues

Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
View Full Journal Page