Lattice strain conversion suppresses ion migration to stabilize wide-bandgap perovskite solar cells

Y Yaru Du (Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, School of Physics, Henan Normal University 1 , Xinxiang 45007,) S Shanshan Du (Institute of Nanoscience and Engineering) X Xiaobo Zhang (State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering) H Hao Wang (Division of Quantitative Sciences, Department of Oncology Johns Hopkins University School of Medicine Baltimore Maryland USA) N Niqian Du (Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, School of Physics, Henan Normal University 1 , Xinxiang 45007,) X Xiaoyi Hou (Henan Key Laboratory of Optoelectronic Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology 2 , Luoyang 471023,) K Kaikai Liu (Department of Materials Science and Engineering) Z Zhiyong Liu (Center for Water Resources and Environment, School of Civil Engineering, Sun Yat-sen University)

Abstract

High-performance, stable wide-bandgap perovskite solar cells (WBG-PSCs) are crucial for advancing the commercialization of perovskite photovoltaic technology. Nonetheless, intrinsic perovskite imperfections, caused by lattice strain and phase segregation, severely hindered the urgent advancement of efficient WBG-PSCs. These imperfections lead to detrimental non-radiative recombination, which limits device performance and accelerates device degradation. In this study, we incorporated 1,3-diaminopropane dihydroiodide into the perovskite surface, effectively mitigating residual strain and suppressing phase separation. Through this synergy, the device effectively suppresses the formation of PbI2 and inactive phases, minimizes interfacial defect generation, and enhances both carrier lifetime and transport properties. Consequently, we developed the WBG-PSCs with a bandgap of 1.66 eV, achieving an impressive power conversion efficiency (PCE) of 22.40% with a high open-circuit voltage (VOC) of 1.23 V. More importantly, these unencapsulated devices demonstrated excellent environmental stability, maintaining 90.25% of their initial PCE after 1500 h in an atmospheric environment with 35% relative humidity. This study provides a simple and effective strategy to improve the efficiency and stability of WBG-PSCs.

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Y

Yaru Du

Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, School of Physics, Henan Normal University 1 , Xinxiang 45007,

S

Shanshan Du

Institute of Nanoscience and Engineering

X

Xiaobo Zhang

State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering

H

Hao Wang

Division of Quantitative Sciences, Department of Oncology Johns Hopkins University School of Medicine Baltimore Maryland USA

N

Niqian Du

Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, School of Physics, Henan Normal University 1 , Xinxiang 45007,

X

Xiaoyi Hou

Henan Key Laboratory of Optoelectronic Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology 2 , Luoyang 471023,

K

Kaikai Liu

Department of Materials Science and Engineering

Z

Zhiyong Liu

Center for Water Resources and Environment, School of Civil Engineering, Sun Yat-sen University