Harnessing radiation-induced fluctuations in spintronic neuromorphic hardware for energy-efficient aerospace computing

Y Yifan Zhang Z Zhihao Zhao X Xinying Wang D Di Wang Y Yu Li L Long Liu L Longchao Liu F Fengjun Dong (Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029,) B Biao Pan (School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University 4 , Beijing 100191,) C Cheng Pan Y Yan Sun G Guozhong Xing (Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029,)

Abstract

The integration of artificial intelligence into space systems faces fundamental challenges in radiation resilience and energy-efficient computation. Here, we present a neuromorphic computing approach that proposes a strategy to transform these challenges into computational advantages via spintronic technology. We developed spin–orbit torque magnetic tunnel junction crossbar array harnesses radiation-induced fluctuations to enhance Hopfield neural network optimization, converting an environmental constraint into a functional benefit. When exposed to heavy ions (e.g., 209Bi23+), the system demonstrates remarkable radiation hardness with only 1.04% tunneling magnetoresistance degradation while maintaining operational stability. Implemented in a 4 Kb array, this neuro-inspired architecture solves the eight-city traveling salesman problem with 95.2% accuracy at 45.06 nJ energy consumption—outperforming conventional radiation-hardened approaches. Such a complementary experimental and simulation approach elaborates that the measured irradiation conductance fluctuations can be mapped to synaptic weights in a Hopfield network model, significantly enhancing its optimization capability. This work corroborates an emerging paradigm for adaptive, energy-efficient nanoscale artificial intelligence hardware that is designed to thrive in extreme environments, with implications for radiation-resilient neuromorphic architectures and edge computing.

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

Y

Yifan Zhang

Z

Zhihao Zhao

X

Xinying Wang

D

Di Wang

Y

Yu Li

L

Long Liu

L

Longchao Liu

F

Fengjun Dong

Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029,

B

Biao Pan

School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University 4 , Beijing 100191,

C

Cheng Pan

Y

Yan Sun

G

Guozhong Xing

Institute of Microelectronics, Chinese Academy of Sciences 1 , Beijing 100029,