Applied Physics Letters
Articles in this Issue
Atomic-level revelation of spontaneous polarization orientation and piezoelectricity in <b> <i>ε</i> </b> -Ga2O3
Advancing polarization control in semiconductors is pivotal for next-generation electronics, enabling revolutionary advances in energy and industrial systems. The metastable ε-Ga2O3 holds promise for...
Surface/interface regulation of NiMo-based catalysts for durable anion exchange membrane water electrolysis under intermittent operation conditions
Encouraging progress has been made in boosting the hydrogen evolution reaction (HER) activity of NiMo-based catalysts. However, their practical application in anion exchange membrane water electrolysi...
Interplay of Kondo physics with incommensurate charge density waves in CeTe3
CeTe3 is a 2-dimensional (2D) Van der Waals (VdW) material with incommensurate charge density waves (CDW), extremely high transition temperature (TCDW), and a large momentum-dependent CDW gap that lea...
Self-compensation of temperature drift for MEMS resonant pressure sensors based on dynamic Joule heating modulation
This paper proposes and experimentally validates an active temperature drift compensation method for electrostatic actuation-piezoresistive detection microelectromechanical systems (MEMS) resonant pre...
Spontaneously evolving intermittent shear fractures reproduce the fault formation and isolated earthquake sequence
When a system is subjected to continuous loading beyond its critical threshold, intermittent energy release events occur. Such behavior is observed in systems that span a wide range of temporal and sp...
Beyond a single mechanism: Uncovering the dual origin of degradation in <b> <i>β</i> </b> -Ga2O3 SBDs under forward bias stress
This study delineated the degradation of β-Ga2O3 Schottky barrier diodes under forward bias stress and identified the physical cause of performance instability in these diodes. Stress was found to inc...
Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of β-(Al <i>x</i> Ga1 <b>−</b> <i>x</i> )2O3 (0 <b>&lt;</b> x <b>&lt;</b> 0.25) determined by generalized spectroscopic ellipsometry
We determine the composition dependence of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlxGa1−x)2O3 for x up to 25% Al. We use Mueller matrix generalized spectrosco...
Acceptor doping enhanced defect effects on the electrical properties of PZST antiferroelectric ceramics
Chemical doping is a key approach to tailoring the properties of PbZrO3-based antiferroelectric materials. However, defects introduced during aliovalent doping can sometimes play a decisive role in re...
Epitaxial <b> <i>γ</i> </b> -CoMn films for antiferromagnetic spintronics
γ -phase alloy materials are of great interest for spintronics due to their antiferromagnetism depending on the interatomic separation. γ-CoMn, as a typical antiferromagnetic 3d transition metal alloy...
Topology-preserving multilevel tuning of a quasi-BIC vortex microlaser with phase-change Sb2S3 metasurfaces
Dynamic reconfiguration of bound-state-in-the-continuum (BIC) microlasers typically involves mode hopping or angle switching, which compromises mode consistency and beam topology. Here, we demonstrate...
Monolithic transfer of thin-film micro-LEDs via electrochemical etching
We report a scalable, low-damage, and high-throughput process for monolithic transfer of III-nitride micro-LED arrays using selective electrochemical etching and wafer bonding. A highly Si-doped n-GaN...
Nozzle geometry optimization for high-current aluminum ion beam acceleration via direct plasma injection scheme
We report the generation of a record aluminum ion beam current exceeding 58 mA at the Al11+ charge state, accelerated to an energy of 5.5 MeV using the direct plasma injection scheme, which integrates...
Investigation of backward switching and write margin optimization of SOT-MTJ devices
Spin–orbit-torque magnetic random access memory (SOT-MRAM) offers superior advantages compared to conventional spin-transfer-torque MRAM. However, it suffers from backward switching, which severely co...
Experimental verification of acoustic wave focusing of sonic black holes
Broadband acoustic wave-focusing sonic black holes (SBHs) has recently been demonstrated numerically via topology optimization. Here, we present the first experimental characterization of an SBH-based...
Transient extension process of the off-state depletion region in GaN HEMTs with SiO2 passivation
This Letter investigates the transient extension process of the off-state depletion region along the channel in SiO2-passivated GaN HEMTs based on a channel-probe branch structure. An SiO2 passivation...
Narrow-linewidth diode laser using a dual-VBG external cavity feedback structure with polarization beam-splitting technology
High-power, narrow-linewidth diode lasers with a high side-mode suppression ratio (SMSR) are critical for achieving enhanced pumping efficiency in advanced laser systems. However, conventional volume...