Investigation of backward switching and write margin optimization of SOT-MTJ devices
Abstract
Spin–orbit-torque magnetic random access memory (SOT-MRAM) offers superior advantages compared to conventional spin-transfer-torque MRAM. However, it suffers from backward switching, which severely constrains the write current window, presenting critical challenges for commercialization. Here, we investigate this phenomenon in full SOT-magnetic tunnel junction structures fabricated on 300 mm wafers. Experiments and numerical simulations demonstrate that Joule heating and field-like torque are the primary factors that dominate the backward switching phenomenon. Based on these insights, the write margin is enhanced by optimizing the SOT layer thickness, pulse width engineering, and stray field optimizations. Our findings establish thermal management as a primary design consideration for scalable SOT-MRAM arrays.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Yi Xu
Chao Wang
Yinuo Shi
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Xin Cao
Zhou Li
School of Materials Science and Engineering
Dinggui Zeng
Zhejiang Hikstor Technology Co., Ltd 2 ., Hangzhou 311305, Zhejiang,
Zhenghui Ji
Zhejiang Hikstor Technology Co., Ltd 2 ., Hangzhou 311305, Zhejiang,
Yaoyu Gu
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Mengxi Wang
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Yongda Chen
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Tianjin Wu
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Zichao Rong
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Guchang Han
State Key Laboratory of Spintronic Devices and Technologies 1 , Hangzhou 311300, Zhejiang,
Bo Liu