Applied Physics Letters
Articles in this Issue
Hillock formation on high-temperature annealed AlN templates due to dislocation nucleation at AlON particles
The origin of hillocks in AlGaN layers grown on high-temperature annealed (HTA) AlN templates has been reinvestigated. During the HTA process, AlON precipitates form within the AlN matrix due to oxyge...
Vibrational properties of Cu2Zn1−xCdxGeS4 solid solutions: Raman analysis and effect of thermal annealing
In this study, the Raman spectra of Cu2Zn1−xCdxGeS4 solid solutions were measured and investigated. The spectra of non-annealed samples showed the presence of three dominant bands located at around 35...
Single-transistor spectrometer via Burstein–Moss absorption edge modulation in compound semiconductors
As on-chip photonic systems evolve toward miniaturization and integration, achieving high-performance spectral analysis within a minimalist architecture remains a critical challenge, typically constra...
Wafer scale characterization of bulk AlN substrates and homoepitaxial growth
Aluminum nitride (AlN) is well suited to address evolving needs of future power systems for increased density, efficiency, and voltage handling. Eventual commercialization of power devices requires ma...
Long-period wurtzite/zinc-blende GaN polytypes as one-dimensional alloys: Impacts of stacking disorder on electronic structure and optical transitions
The electronic structure of wurtzite/zinc-blende GaN polytypes is investigated by treating the stacking sequences of hexagonal and cubic bilayers as one-dimensional pseudo-binary alloys. Using an adva...
Creation of depth-confined, shallow nitrogen-vacancy centers in diamond with tunable density
Engineering shallow nitrogen-vacancy (NV) centers in diamond holds the key to unlocking new advances in nanoscale quantum sensing. We find that the creation of near-surface NVs through delta doping du...
Sign reversal of twofold angle-dependent magnetoresistance in Pt/Mn4N bilayers
Ferrimagnetic Mn4N thin films with perpendicular magnetic anisotropy show great potential for spintronic applications. In this study, we systematically investigated the angle-dependent magnetoresistan...
Elastic anisotropy and lattice anharmonicity in hexagonal boron nitride revealed by birefringence-resolved Brillouin light scattering
Hexagonal boron nitride (h-BN) is a foundational van der Waals crystal whose exceptional mechanical anisotropy is pivotal for next-generation electronics and quantum technologies. However, a comprehen...
Assessing and tackling the barocaloric fatigue for applicable solid-state refrigeration
Barocaloric materials with pressure-driven first-order transitions are promising for solid-state refrigeration but often suffer from severe cycling fatigue. Here, we select NH4I as a model material, w...
Metasurface tape for efficient millimeter-wave power transfer via surface-wave propagation
Millimeter-wave technologies are essential for future high-speed wireless communications. However, a fundamental challenge remains in the form of severe free-space path loss, where the power density d...
Low-loss material for infrared protection of cryogenic quantum applications
The fragile quantum states of low-temperature quantum applications require protection from infrared radiation caused by higher-temperature stages or other sources. In particular, signal lines have to...
Unidirectional edge spin waves induced by spin-momentum locking of elastic waves in magnetic waveguides
We study the control of edge magnons in magnetic waveguides by chiral elastic waves. Micromagnetic simulations show that chiral elastic waves can drive edge magnons to propagate unidirectionally. This...
Realization of insulating buffer layers via MOCVD-grown, nitrogen-doped (010) β-Ga2O3
We present metalorganic chemical vapor deposition-grown, nitrogen-doped β-Ga2O3 films as an insulating buffer layer on Fe-doped (010) β-Ga2O3 substrates in lieu of a 49% HF treatment to remove uninten...
Selective addressing of solid-state spins with an integrated device
Solid-state spins have emerged as one of the most promising platforms for quantum sensing and information processing. A high level of integration and miniaturization of quantum devices is required for...
Large positive magnetoresistance and anisotropic magnetoresistance in a layered antiferromagnetic EuAl2Ge2
Magnetoresistance (MR) and anisotropic magnetoresistance (AMR) are fundamental probes of charge transport in magnetic materials. In most magnetic systems, the MR is relatively small due to strong spin...
Sensitive remote electric field measurements using water vapor as a molecular probe
A number of molecular processes involving water molecules occur under the influence of electric fields and/or charges. This Letter demonstrates sensitive electric field detection as low as 5.6 V/mm vi...
MoOx/V2Ox bilayer hole-selective passivating contact for silicon heterojunction solar cells
The molybdenum oxide (MoOx) hole-selective passivating contact for crystalline silicon (c-Si) solar cells is highly susceptible to degradation upon exposure to ambient air during both device fabricati...
Improved TMR on CoFeB/MgO/CoFeB p-MTJ on textured TiN buffer layer integrated on Si substrate
In this study, a highly texture-driven CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) system is realized using a textured TiN seed layer on industrial standard silicon wafers. The textured MTJ exhibit...
Atomic-scale reconstruction of oxide driven by oxygen transfer at AlN-capped GaN interfaces revealed through molecular dynamics simulations
This study reports the elucidation of atomic-scale reconstruction mechanisms at the AlN/GaN interface with native gallium oxide by means of molecular dynamics simulations based on a novel charge-trans...
Near-constant thermoelectric power factor of GaN two-dimensional hole gas in cryogenic environments
This work investigates the thermoelectric properties of a gallium nitride (GaN)-based two-dimensional hole gas (2DHG) using a double heterojunction, which can be utilized in complementary GaN thermoel...
Optimized spectral purity of unfiltered photons via pump and nonlinearity shaping
Photonic quantum technologies rely on the efficient generation and interference of indistinguishable photons. Exceptional achievements in this respect have been obtained by domain engineering of quasi...
Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation
In this Letter, we report gate leakage suppression in p-GaN/AlGaN p-channel transistors enabled by a transferred boron nitride (BN) gate dielectric for high-temperature operation. To elucidate the imp...
Biochar-driven multi-stage pyrolysis-roasting-relithiation strategy enables energy-saving and green regeneration of spent LiCoO2 batteries
The rapid expansion of the lithium-ion battery (LIB) industry has resulted in the exponential growth of spent LIBs, underscoring the urgent requirement for the efficient recycling and utilization of s...
Lateral carrier crosstalk suppression in pure-boron ultraviolet detector arrays using a novel deep trench isolation process
Pure-boron (Pure-B) ultraviolet photodiodes form an ultra-shallow P+ junction at the silicon surface, enabling a nearly ideal entrance window with high quantum efficiency and low dark current for UV/E...
Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures
Polymer exposure during van der Waals heterostructure fabrication is widely regarded as compromising the integrity of the electronic system required for hosting emergent quantum physics. This assumpti...