Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures

Z Zihan Zhang S Suji Park (Center for Functional Nanomaterials, Brookhaven National Laboratory 2 , Upton, New York 11973,) M Moeid Jamalzadeh (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,) K Kevin G. Yager (Center for Functional Nanomaterials, Brookhaven National Laboratory 2 , Upton, New York 11973,) T Takashi Taniguchi K Kenji Watanabe P Pilkyung Moon (Arts and Sciences, NYU Shanghai 5 , Shanghai 200124,) Z Zhujun Huang (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,) D Davood Shahrjerdi (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,)

Abstract

Polymer exposure during van der Waals heterostructure fabrication is widely regarded as compromising the integrity of the electronic system required for hosting emergent quantum physics. This assumption has persisted largely because electronic benchmarking of heterostructures from polymer-exposed graphene has remained limited to only foundational transport metrics, such as mobility and charge inhomogeneity. Here, we challenge this assumption by establishing that graphene heterostructures produced by polyvinyl alcohol (PVA)-assisted exfoliation and encapsulated in hexagonal boron nitride using elevated-temperature lamination satisfy demanding quantum transport benchmarks. Beyond exhibiting ultra-high mobility and ballistic transport, these heterostructures yield quantum scattering times comparable to the best polymer-free devices. Most demanding of all, moiré superlattices from PVA-exposed graphene exhibit Hofstadter butterfly spectra, confirming spatially uniform interlayer coupling across the device area. These results establish that PVA exposure is compatible with low-disorder electronic systems, relaxing the trade-off between scalable fabrication and low-disorder quantum transport. This study motivates further development of polymer-assisted assembly with engineered residue-removal protocols.

Article Details

Volume / Issue Vol. 128, Issue 20
Published May 18, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Z

Zihan Zhang

S

Suji Park

Center for Functional Nanomaterials, Brookhaven National Laboratory 2 , Upton, New York 11973,

M

Moeid Jamalzadeh

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,

K

Kevin G. Yager

Center for Functional Nanomaterials, Brookhaven National Laboratory 2 , Upton, New York 11973,

T

Takashi Taniguchi

K

Kenji Watanabe

P

Pilkyung Moon

Arts and Sciences, NYU Shanghai 5 , Shanghai 200124,

Z

Zhujun Huang

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,

D

Davood Shahrjerdi

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,