Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation
Abstract
In this Letter, we report gate leakage suppression in p-GaN/AlGaN p-channel transistors enabled by a transferred boron nitride (BN) gate dielectric for high-temperature operation. To elucidate the impact of BN integration, we systematically compare transfer characteristics, transconductance, and related metrics as functions of temperature (25–300 °C) for BN and conventional Schottky gate devices. Notably, current density in the BN device remains stable above ∼3 mA/mm at 300 °C, with an on/off ratio >103 and ID, max × LDS reaching ∼47 μA. At the same time, both the threshold voltage shift and the subthreshold slope show minimal variation, highlighting the excellent stability of this device. These results can provide insight into design strategies for high-temperature p-GaN p-channel transistors.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Cheng Chang
Chenyang Lin
Department of Materials Science and Nanoengineering, Rice University 2 , Houston, Texas 77005,
Shisong Luo
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Huayi Chen
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Chufan Qiu
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Lucas Lau
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Zonghao Zhang
Tao Li
Md Jahidul Hoq Emon
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Rummanur Rahad
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,
Jun Lou
Yuji Zhao
Department of Electrical and Computer Engineering, Rice University 1 , Houston, Texas 77005,