Elastic anisotropy and lattice anharmonicity in hexagonal boron nitride revealed by birefringence-resolved Brillouin light scattering
Abstract
Hexagonal boron nitride (h-BN) is a foundational van der Waals crystal whose exceptional mechanical anisotropy is pivotal for next-generation electronics and quantum technologies. However, a comprehensive understanding of its full elastic tensor and its temperature evolution, crucial for predictive device design, has remained incomplete. Here, we employ birefringence-resolved Brillouin light scattering to determine the elastic tensor and its temperature evolution in a single c-axis-oriented crystal h-BN. Using a circular polarization configuration, we simultaneously resolve the ordinary and extraordinary beams, which enables unambiguous disentanglement of birefringence-induced acoustic mode splitting. This sample-efficient approach yields three independent elastic constants at room temperature: C33 = 24.5 ± 0.1 GPa, C44 = 13.2 ± 0.9 GPa, and C13 = −3.1 ± 5.7 GPa, revealing the extreme mechanical anisotropy of this layered material. From these constants, the lattice thermal conductivity is estimated to be 21 W m−1 K−1 along the c-axis and 347 W m−1 K−1 within the basal plane, quantitatively reflecting the giant anisotropy in heat transport. Furthermore, temperature-dependent measurements across 65–460 K reveal a linear thermal softening of the out-of-plane elastic constant C33, characterized by a relative coefficient dC33/C33dT ≈ −3 × 10–4 K−1, alongside a concurrent linear increase in phonon linewidth governed by three-phonon scattering. These results provide essential quantitative data on the thermo-elastic properties of h-BN, crucial for the predictive modeling and reliable design of h-BN-based devices under thermal stress.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (3)
Simin Pang
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Ya-Ru Xie
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Jun Zhang