Li/Ni disordering modulated resistive switching behavior in LiNiO2

Abstract

With the rapid development of computing technology, two-terminal memristors with controllable resistance have attracted considerable attention due to their simple structure and ease of integration. This study proposes a method for modulating resistive switching behavior by adjusting the degree of Li/Ni disordering in LiNiO2 (LNO) memristors. By varying the synthesis temperature, the Li/Ni disordering in LNO can be controlled, as confirmed by refined x-ray diffraction results, thereby affecting the migration of Li+ within the material. Volatile bidirectional threshold switching behavior is observed in devices based on LNO synthesized at 700 °C with different electrodes. In contrast, samples synthesized at 750 and 800 °C, which exhibite higher Li/Ni disordering, demonstrate nonvolatile memristive switching (NMS) behavior. Furthermore, by tuning various synthesis conditions, the dependence of resistive switching behavior on the degree of Li/Ni disordering is further validated. Based on these behaviors and the underlying conduction mechanisms, a resistive switching model is proposed, combining the effects of phase transitions and oxygen vacancy conductive filaments. This study provides important insights for modulating the performance of memristors based on Li+-migration materials through atomic-level regulation.