Achieving uniform elemental distribution and high crystallinity in Cu3V(S,Se)4 solar cells via optimizing selenization engineering

X Xu Wang R Rui Wang Y Yanchun Yang G Guonan Cui (School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,) L Lulu Bai (School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,) Y Yanqing Liu Z Zhihui Gong (School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,) Y Yuze Sun Y Yongjun Cao (College of Physics and Electronic Information, Inner Mongolia Normal University 1 , Hohhot 010022, Inner Mongolia,) C Chengjun Zhu (School of Physical Science and Technology, Inner Mongolia University 3 , 2352 West University Road, Huhhot, Inner Mongolia 010021,)

Abstract

The selenization parameters for solution-based Cu3V(S,Se)4 thin film solar cells were systematically studied. An increasing selenization temperature can help Cu, S, and Se elements diffuse effectively, distribute evenly in the crystal grains and grain boundaries, which improve the crystallinity, compactness, and electrical properties of the Cu3V(S,Se)4 films. The extension of selenization time can also optimize the crystallinity of the film. The optimal selenization parameters are determined to be 530 °C and 70 min, and the corresponding thin film is also regarded as the best sample. The band structure of the best sample is studied further and matches that of the buffer layer. Finally, the assembled device can present the best photoelectric conversion efficiency (PCE) of 2.16%, which is increased by 28.6% compared with what we previously reported in 2024 (1.68%).

Article Details

Volume / Issue Vol. 128, Issue 21
Published May 25, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

X

Xu Wang

R

Rui Wang

Y

Yanchun Yang

G

Guonan Cui

School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,

L

Lulu Bai

School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,

Y

Yanqing Liu

Z

Zhihui Gong

School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,

Y

Yuze Sun

Y

Yongjun Cao

College of Physics and Electronic Information, Inner Mongolia Normal University 1 , Hohhot 010022, Inner Mongolia,

C

Chengjun Zhu

School of Physical Science and Technology, Inner Mongolia University 3 , 2352 West University Road, Huhhot, Inner Mongolia 010021,