Applied Physics Letters
Articles in this Issue
Enhanced superconducting nanowire single-photon detector performances using silicon capping
Niobium titanium nitride-based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the x-ray to the mid-infrared. Nonethel...
Electron-beam irradiation–induced quasi-annealing enables enhanced thermoelectrics in commercial <i>n</i> -type Bi2Te2.7Se0.3
Commercial n-type Bi2Te2.7Se0.3 is widely employed for near-room-temperature thermoelectric (TE) applications; however, its TE performance remains inferior to that of p-type Bi0.5Sb1.5Te3, resulting i...
Vacuum barrier engineering tunneling magnetoresistance in van der Waals Fe5GeTe2 homojunctions
The atomically thin and flexible characteristics of 2D van der Waals (vdW) materials allow for high-quality, tunable multilayer stacking. This gives rise to pure physical phenomena and broad applicati...
Persistence of self-limited conditions in bulk silicon induced by mid-infrared femtosecond laser pulses
With the advent of intense infrared laser solutions, three-dimensional laser writing progressively becomes applicable to silicon (Si) and other semiconductors. However, the nonlinearities required for...
Hot carrier transfer in Bi2Se3/Te heterostructure promoted by substrate-introduced effective field
Van der Waals heterostructures with negligible lattice mismatch and flexible fabrication provide a platform to modulate the photoactive properties and extend the applications of two-dimensional materi...
Microwave plasma CVD growth and characterization of polycrystalline diamond films on β-Ga2O3
The integration of diamond with β-Ga2O3 presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of β-Ga2O3 can lead t...
Engineering a surface reconstruction cascade via synergistic halide management for high-performance perovskite photovoltaics
The efficiency and stability of perovskite solar cells (PSCs) are limited by surface defect-induced non-radiative recombination and ion migration. Herein, we propose a cascading-cooperative reconstruc...
Heat flux-dependent partial discharge behavior in a two-phase fluorinated liquid: Role of the microstructured heating surface
Fluorinated liquids are essential dielectric coolants used in immersion cooling and near-junction thermal management of high-voltage, high-power-density semiconductors. The impact of thermally induced...
Fast design and fabrication of patient-specific metasurfaces toward intraocular lens applications
Multifocal intraocular lenses (IOLs) provide functional vision at multiple distances, yet clinical satisfaction is strongly influenced by patient-specific through-focus preferences among near, interme...
Antisymmetric planar Hall effect in Ta/Py bilayers—Evidence for perpendicular interfacial magnetization tuned by in-plane bulk magnetization
Antisymmetric planar Hall effect (APHE) is observed in Ta/Py bilayers, which exhibits a sinusoidal dependence on the in-plane magnetization orientation. The APHE resistance is independent of both the...
Time-dependent gate breakdown of Schottky p-GaN gate HEMTs down to 15 K
This work reveals the role of electron mean free path (λL) in time-dependent gate breakdown (TDGB) of Schottky p-GaN gate through cryogenic temperature measurements down to 15 K. Contrary to the monot...
Lattice orientation-dependent circular photogalvanic effect in hydrogenated TiO2
TiO2 is a widely utilized semiconductor material. This study demonstrates that hydrogenation can induce spin–orbit coupling (SOC) in TiO2, thereby generating a circular photogalvanic effect (CPGE). A...
An implantable acoustofluidic chip for on-demand and programmable drug delivery
Clinical drug delivery requires precise control, yet conventional methods suffer from fluctuating concentrations and low bioavailability. While implantable devices are promising for long-term therapy,...
Avalanche leakage current mechanism in vertical GaN devices on foreign substrates
Avalanche breakdown, the most desirable breakdown mode in power devices, is typically characterized by a positive temperature coefficient (PTC) of breakdown voltage (BV) extracted from leakage current...
Cubic magneto-optic Kerr effect in Co(111) thin films
The magneto-optic Kerr effect (MOKE) is often applied as a tool for the magnetic characterization of thin films. Here, the change in polarization upon reflection from the magnetized sample is mainly r...
Kevlar-based laser-induced graphene memristors and its relevant applications
Memristors, as key devices for compute-in-memory, are increasingly explored for flexible and wearable applications. The one-step fabrication of Al/laser-induced graphene (LIG)/Al memristor with flexib...
Broadband terahertz conductivity and polarization dynamics of single-crystal diamond
We present broadband terahertz studies of high-purity single-crystal diamond grown by chemical vapor deposition over a frequency range of 0.2–4.5 THz. The experimentally characterized conductivity exh...
Electronic structure and defect properties of Bi-doped GaN: Origins of photoluminescence and optical absorption
Extreme lattice-mismatched III–V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniques. However, theore...
Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy
The relationship between crystal quality and growth rate, as well as the effect of growth temperature, was investigated for Gallium nitride (GaN) growth using oxide vapor-phase epitaxy under condition...
Direction-selective enhancement of terahertz emission in Py/Ni/Pt via stacking-dependent angular momentum transport
Spintronic terahertz (THz) emitters based on ferromagnet/heavy-metal heterostructures provide a compact platform for broadband THz generation. Here, we demonstrate a direction-selective enhancement of...
Thermal conductance across bonded SiO <i>x</i> –SiO <i>x</i> interfaces in hybrid bonding process
Hybrid bonding is a pivotal technology for enabling three-dimensional integrated circuits (3D-ICs). Among the foremost challenges facing 3D-IC implementation is thermal management, where a deep unders...
Graphene nanomechanical sensing of trap-assisted charge dynamics in leaky silicon oxide
Nanomechanical resonators can detect electronic degrees of freedom through their sensitivity to small electrical forces. Here, we use few-layer graphene membranes as nanomechanical probes to investiga...
Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs
In this Letter, the impact of gate-width (Wg) scaling on the electron transport and electrical characteristics of GaN HEMTs is investigated using an experiment-validated coupled drift-diffusion and Mo...
Orbital torque efficiency in NixFe1-x/Pt bilayers
Distinguished from spin torque dominantly determined by spin Hall angle of nonmagnetic metal, the generation and modulation of orbital torque strongly relies on the electronic structure, orbital magne...
Toward robust stretchable OLEDs: Unifying light extraction and mechanical compliance via random micro-/nanostructuring
The advancement of flexible and stretchable optoelectronics has long been limited by two fundamental challenges. The first is inefficient light extraction caused by photon trapping in waveguide modes,...