Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs
Abstract
In this Letter, the impact of gate-width (Wg) scaling on the electron transport and electrical characteristics of GaN HEMTs is investigated using an experiment-validated coupled drift-diffusion and Monte Carlo framework. For gate length (Lg) = 0.2 μm devices with Wg scaled from 200 to 80 μm, the peak ve increases by 10%, leading to higher normalized transconductance (gm) and Id, primarily due to reduced lattice temperature (TL) and the polarization Coulomb field scattering. Meanwhile, the maximum cutoff frequency (fT,max) slightly degrades because the reduced total transconductance (gm,tot) increases the extrinsic delay (τext). These results provide a quantitative transport-based explanation of the Wg-dependent performance in GaN HEMTs.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Mingyan Wang
Yixu Yao
Sen Huang
Ke Wei
The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi’an Jiaotong University, No. 28 West Xianning Road, Xi’an 710049, People’s Republic of China
Xinhua Wang
Xinyu Liu
Yuanjie Lv
The Application Specific Integrated Circuit, Hebei Semiconductor Research Institute 2 , Shijiazhuang 050051,
Heng Zhou
National Synchrotron Radiation Laboratory, State Key Laboratory of Precision and Intelligent Chemistry
Chao Liu
Peng Cui
MOE Key Laboratory of Functionalized Molecular Solids, Anhui Laboratory of Molecule-Based Materials, College of Chemistry and Materials Science
Zhaojun Lin
School of Integrated Circuits, Shandong University 2 , Jinan 250101,
Kevin J. Chen