Applied Physics Letters

Vol. 128, Issue 26 Issue 26 2026
56
Articles

Articles in this Issue

Terahertz-driven nonlinear phononics induces transient ferromagnetism in antiferromagnetic MnF2

Yi-Han Cheng, Srinivas Gadipelli, Hong Zhang et al. Jun 29, 2026 10.1063/5.0336010

Ultrafast optical manipulation of magnetism provides a promising pathway for next-generation spintronic technologies. Here, we theoretically demonstrate that terahertz-driven nonlinear phononics can i...

Significant reduction of thermal conductivity in monolayer MoSe2 through fractional-layer engineering

Honggang Zhang, Xin Liu, Wenwen Chen et al. Jun 29, 2026 10.1063/5.0326624

Controlling phonon-mediated heat transport in two-dimensional (2D) materials through intrinsic and disorder-free mechanisms remains a fundamental challenge. Here, we demonstrate that fractional-layer...

Surface modulation of two-dimensional perovskite for spatially selective p-type doping in van der Waals stacked MoS2 toward high-performance homojunction photodetector

Junxiong Liu, Yueheng Lu, Kexin Liu et al. Jun 29, 2026 10.1063/5.0328447

Homogeneous p–n junctions in two-dimensional transition metal dichalcogenides (e.g., MoS2) demonstrate significant potential in high-performance optoelectronic devices. However, achieving stable and c...

Three-dimensional characterization of laser-induced stress in a bulk GaN substrate using stimulated Raman scattering microscopy

Yusuke Wakamoto, Shun Takahashi, Atsushi Tanaka et al. Jun 29, 2026 10.1063/5.0331564

The three-dimensional (3D) stress distribution in a bulk GaN substrate with laser-induced indentations for laser slicing was characterized using stimulated Raman scattering (SRS) microscopy. Local shi...

Recombination mechanisms in CIGS solar cells: Insights from temperature-dependent electrical measurements

Asliddin Komilov, Damir Istamov, Janet Neerken et al. Jun 29, 2026 10.1063/5.0344211

Temperature, a key environmental factor affecting photovoltaic devices, strongly influences the electrical performance of CIGS solar cells. This study examines cells with 30 and 60 nm CdS buffer layer...

Temperature-accelerated lifetime testing and failure analysis of GaAs and InGaAs laser power converters

Di Feng, Jun Wang, Zhiqiang Mou et al. Jun 29, 2026 10.1063/5.0335066

Laser power converters (LPCs) are key components in laser wireless power transmission systems. In this work, accelerated lifetime tests were conducted on GaAs single-junction and InGaAs single-junctio...

MgB2 thermal kinetic inductance detector

T. Jabbari, A. Hawkins, A. Wandui et al. Jun 29, 2026 10.1063/5.0330476

Thermal Kinetic Inductance Detectors (TKIDs) inherently combine the phonon-limited noise performance of traditional bolometers with the array scalability and responsivity of superconducting kinetic in...

Pressure-induced contact resistance dominance in scanning spreading resistance microscopy of undoped InAs/GaSb heterostructure

D. E. Sviridov, A. V. Klekovkin, I. I. Minaev et al. Jun 29, 2026 10.1063/5.0335605

This study examines the nature of current contrast formation and local transport mechanisms during scanning spreading resistance microscopy (SSRM) investigation of an undoped InAs/GaSb heterostructure...

Radiation-resistant InGaAs nanoscale air channel photodiodes

Xiangyang Li, Feiliang Chen, Lixin Sun et al. Jun 29, 2026 10.1063/5.0327657

The nanoscale air channel photodiode (NACPD) is an emerging device that combines the advantages of vacuum phototubes and semiconductor photodiodes. Its ballistic transport mechanism theoretically enab...

Hyperspectral single-pixel imaging from visible to short-wave infrared

Xinrui Lin, Tingting Zheng, Genwei Zhang et al. Jun 29, 2026 10.1063/5.0342545

Hyperspectral imaging enables simultaneous acquisition of spatial and spectral information and plays a key role in material identification and compositional analysis. However, existing camera-based hy...

Performance enhancement in MoS2/CuInP2S6 photodetectors via topography-designed flexoelectric fields

Jian Sun, Bingke Zhang, Shanzheng Du et al. Jun 29, 2026 10.1063/5.0338471

Flexoelectricity, driven by strain gradients, offers a mechanical route to manipulate ferroelectric polarization and electronic states for nanoscale applications. In this work, we demonstrate topograp...

Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures

P. Pampili, V. Z. Zubialevich, B. Mondal et al. Jun 29, 2026 10.1063/5.0325471

In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminum content AlGaN/AlGaN heterostructures. On the one hand, the growth of high-cry...

Ultra-wide Love-mode bandgaps in high-frequency thin-film surface acoustic wave phononic crystals on LiTaO3/SiC

Yi-Han He, Cheng-Zhe Cao, Hao Yan et al. Jun 29, 2026 10.1063/5.0333871

Thin-film surface acoustic wave (TF-SAW) phononic crystals (PnCs) are promising for manipulating gigahertz acoustic waves, but achieving wide bandgaps at high frequencies remains challenging because a...

Scattering mechanism of 2DEG in ScAlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Kouei Kubota, Yusuke Wakamoto, Takeshi Iwata et al. Jun 29, 2026 10.1063/5.0323168

We investigated the transport properties of 2DEG in ScAlN/GaN heterostructures prepared by plasma-assisted molecular beam epitaxy. Four samples with Sc compositions of 3%–17% and ScAlN barrier thickne...

Anomalous spatial response of transverse thermoelectric thin-film devices under localized thermal excitation

Xingyun Jin, Yahui Huang, Zhihan Chen et al. Jun 29, 2026 10.1063/5.0339216

Localized thermal excitation is ubiquitous in practical heat-flux sensing but deviates from the uniform-heating assumption underlying conventional transverse thermoelectric (TTE) models. Here, we demo...

Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice

Kyohei Koseki, Hiroto Otsuka, Ryoma Shirotori et al. Jun 29, 2026 10.1063/5.0331716

Red emission remains a major bottleneck for practical full-color micro-light-emitting diodes (microLEDs) because the quantum efficiencies of InGaN decrease in the long-wavelength region. To enhance re...

Memory and logic operations in self-powered multiferroic photodetectors

Hongyang Li, Qiligeer Bai, Uudam Borjigin et al. Jun 29, 2026 10.1063/5.0338566

The in-sensor computing paradigm, which enables rapid signal processing with low energy consumption, pursues a frontier model to reduce data transmission and redundancy. The direct conversion of light...

Experimental observation of photonic Landau levels induced by synthetic magnetic fields

Sijie Yin, Wanting Wu, Liwei Shi et al. Jun 29, 2026 10.1063/5.0337812

Pseudo-magnetic fields, as artificially synthesized gauge fields, have been a subject of significant research attention in classical wave systems. In this study, the pseudo-magnetic field control is r...

Combined modulation of electrical and thermal transport properties in diamond (100) surfaces via reconstruction and passivation

Linan Ma, Zhendong Li, Xiaoxia Wang et al. Jun 29, 2026 10.1063/5.0335887

The intrinsic metallicity of diamond (100) surfaces, arising from unsaturated dangling bonds, remains a critical bottleneck for their integration into high-performance electronic devices. Here, we con...

Metallic cicada wing-inspired surfaces fabricated via nanoimprint lithography coupled with pulse electrodeposition for enhanced wetting and thermal functionality

Yutao Chen, Sujan Dewanjee, Donghyeon Yoo et al. Jun 29, 2026 10.1063/5.0332491

Nanostructured surfaces found in nature offer powerful strategies for thermal-fluid manipulation, yet their replication into durable engineered materials is constrained by fabrication limitations and...

Impact of low growth temperature on hole concentration in polarization-doped AlGaN on AlN

Teppei Takehisa, Sena Miura, Hibiki Muto et al. Jun 29, 2026 10.1063/5.0323044

We investigated the impact of growth temperature on hole concentration in polarization-doped AlGaN with high AlN mole fraction on AlN, without Mg doping. A significantly lower growth temperature (arou...

Cladding based GaN waveguide engineering for efficient octave-spanning spectra generation and fceo detection

A. Volpini, I. Rousseau, S. Lecomte et al. Jun 29, 2026 10.1063/5.0325171

Extending the spectral content of femtosecond lasers to span at least one octave is key for their stabilization through self-referencing. An effective way to achieve this goal is to leverage soliton d...

Magnetic skyrmions in two-dimensional half-metallic MoX2 (X = S, Se)

Songli Dai, Zean Tian, Quan Zheng et al. Jun 29, 2026 10.1063/5.0300588

Magnetic skyrmions hosted in two-dimensional (2D) magnets offer exciting prospects for next-generation spintronic information storage and processing. Nevertheless, progress on skyrmions in 2D systems...

Scattering-induced loss in ferroelectric photonic devices

Jonah Townsend, Enzo Conceição Picinini, Rogério de Sousa Jun 29, 2026 10.1063/5.0341494

Ferroelectric materials have colossal optical nonlinearities, but their integration into quantum photonic chips is made challenging by the additional loss mechanisms that they introduce. Here, we pres...

Multiband quantum oscillations and Kohler's rule in the extremely large magnetoresistance material pyrite PtBi2

Lingxiao Zhao, Peipei Wang, Alei Li et al. Jun 29, 2026 10.1063/5.0327581

We present magnetotransport, Seebeck effect, and magnetic torque measurements conducted on the Dirac semimetal PtBi2 single crystals with a temperature range of 1.8–300 K and magnetic field strength u...

All Issues

Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
View Full Journal Page