Impact of low growth temperature on hole concentration in polarization-doped AlGaN on AlN

Teppei Takehisa; Sena Miura; Hibiki Muto; Haruto Hirota; Kenta Takase; Hisanori Ishiguro; Satoshi Kamiyama; Motoaki Iwaya; Yoshiki Saito; Hiroshi Miwa; Tetsuya Takeuchi

doi:10.1063/5.0323044

Impact of low growth temperature on hole concentration in polarization-doped AlGaN on AlN

T Teppei Takehisa (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) S Sena Miura (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) H Hibiki Muto (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) H Haruto Hirota (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) K Kenta Takase (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) H Hisanori Ishiguro (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) S Satoshi Kamiyama (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) M Motoaki Iwaya (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) Y Yoshiki Saito (New Value Business Headquarters, Toyoda Gosei Co., Ltd 2 ., Inazawa 490-1312,) H Hiroshi Miwa (New Value Business Headquarters, Toyoda Gosei Co., Ltd 2 ., Inazawa 490-1312,) T Tetsuya Takeuchi (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,)

Abstract

We investigated the impact of growth temperature on hole concentration in polarization-doped AlGaN with high AlN mole fraction on AlN, without Mg doping. A significantly lower growth temperature (around 800 °C) results in a higher hole concentration of 5 × 1018 cm−3 at room temperature in polarization-doped AlGaN without Mg doping, compared with traditional growth temperatures above 1000 °C. Furthermore, a hole concentration of 1 × 1018 cm−3 was observed even at 80 K in such an AlGaN layer without Mg doping, indicating that the hole concentration of 1 × 1018 cm−3 was induced by polarization doping alone. Previously, the hole concentrations in such AlGaN layers relied on a combination of polarization doping and Mg doping. Our results demonstrate that low growth temperature enables high hole concentration even without Mg doping.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 128, Issue 26

Published June 29, 2026

DOI 10.1063/5.0323044

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences