Ultra-wide Love-mode bandgaps in high-frequency thin-film surface acoustic wave phononic crystals on LiTaO3/SiC

Y Yi-Han He (National Laboratory of Solid-State Microstructures and Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,) C Cheng-Zhe Cao (National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,) H Hao Yan Z Zhen-Hui Qin (National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,) S Si-Yuan Yu (National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,) Y Yan-feng Chen

Abstract

Thin-film surface acoustic wave (TF-SAW) phononic crystals (PnCs) are promising for manipulating gigahertz acoustic waves, but achieving wide bandgaps at high frequencies remains challenging because achieving them requires both strong acoustic confinement and efficient periodic modulation. Here, we demonstrate high-frequency TF-SAW PnCs on a LiTaO3/SiC platform and realize ultra-wide Love-mode bandgaps in the gigahertz regime. Using a 200-nm-thick 42°YX-cut LiTaO3 thin film on SiC, we systematically investigate two representative geometries: a two-dimensional triangular lattice of etched air holes and a one-dimensional groove array. Transmission-line measurements confirm pronounced suppression of Love-mode propagation over 2.64–3.31 GHz (22.5%) for the triangular-lattice PnC and 2.50–3.29 GHz (27.3%) for the 1D groove PnC, in agreement with the calculated band structures. We further clarify the geometric design trends governing the bandgap characteristics and identify deeper etching together with reduced lattice period as practical routes toward even wider bandgaps and higher operating frequencies. These results establish LiTaO3/SiC TF-SAW PnCs as a compelling platform for high-frequency, wideband acoustic wave manipulation and highlight their strong potential for next-generation integrated acoustic devices, including filters, resonators, and sensors.

Article Details

Volume / Issue Vol. 128, Issue 26
Published June 29, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

Y

Yi-Han He

National Laboratory of Solid-State Microstructures and Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,

C

Cheng-Zhe Cao

National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,

H

Hao Yan

Z

Zhen-Hui Qin

National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,

S

Si-Yuan Yu

National Laboratory of Solid-State Microstructures & Department of Materials Science and Engineering, Nanjing University 1 , Nanjing 210093,

Y

Yan-feng Chen