Memory and logic operations in self-powered multiferroic photodetectors

H Hongyang Li Q Qiligeer Bai (School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,) U Uudam Borjigin (School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,) L Li Zhen C Chaoran Zhang (Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany) S Shifeng Zhao (School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,) Y Yulong Bai (Department of Chemistry, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China)

Abstract

The in-sensor computing paradigm, which enables rapid signal processing with low energy consumption, pursues a frontier model to reduce data transmission and redundancy. The direct conversion of light signals into photocurrent is achieved in multiferroic photodetectors, which implement in-sensor computing. The millisecond response and detectivity of ∼1015 Jones enable pronounced performance in wavelengths 300–430 nm. By leveraging the plastic photocurrent/photoconductance, Bi4Ti3−xFexO12 multiferroic photodetectors exhibit memory/forgetting and logic functions (OR, AND, and NOT) under light and electric pulse stimulation, which is attributed to the coupling of magnetic photocurrent with the imprinting effect. The observations highlight the advantages of in-sensor memory and computing.

Article Details

Volume / Issue Vol. 128, Issue 26
Published June 29, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

H

Hongyang Li

Q

Qiligeer Bai

School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,

U

Uudam Borjigin

School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,

L

Li Zhen

C

Chaoran Zhang

Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany

S

Shifeng Zhao

School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,

Y

Yulong Bai

Department of Chemistry, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China