Applied Physics Letters
Articles in this Issue
Realization of high power factor in polycrystalline In doped Sb2Te3 thin films for wearable application
Te-based materials exhibit outstanding thermoelectric performance at room temperature, promising candidates for the fabrication of the wearable electronic devices and chip-sensor of internet-of-things...
Temperature-dependent defect dipoles polarization of (La, Nb) co-doped TiO2/PEI microwave absorption materials
Point defect engineering has emerged as a key strategy to pursue efficient microwave absorption (MA) by effectively balancing impedance matching and polarization loss. Nevertheless, the detailed inter...
Electrohydrodynamic direct writing of high-resolution PVA hydrogels via thermally induced sol-gel transition
Polyvinyl alcohol (PVA)-based hydrogels have received a lot of attention due to their superior biocompatibility and versatile applications. However, the fabrication of structurally complex hydrogels a...
(Ultra)wide-bandgap semiconductors for extreme environment electronics
Thermal evidences for multi-domain coexistence of freestanding VO2 crystalline microbeams with insulator–insulator transitions
Vanadium dioxide (VO2) exhibits multiple insulating states and complex transitions, both among these states and to a metallic rutile (R) phase. In this study, we investigate freestanding VO2 microbeam...
Enhancement of thermoelectric power factor in CaGe2 films through interlayer atomic modulation
Group IVA elements Si and Ge and their compounds possess abundant natural distribution and excellent electrical properties that are widely utilized in Si-based technology. The exploration for potentia...
Temperature-controlled terahertz chirality and imaging in a nested split-rings metasurface
Chiral metasurfaces exhibit vast application prospects in near-field imaging, polarization conversion, and chiral sensing. In this work, we theoretically propose a temperature-tunable terahertz (THz)...
Multifunctional VO2 metasurface thermal emitter with switchable radiation bandwidth and direction
The controllability of the spectral width and intensity of long-wave infrared (LWIR) emission is essential for various applications, including optical stealth, infrared radiation sources, and infrared...
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
Herein, we report a thick-AlN-barrier (TAB) based AlN/GaN RF HEMT with remarkable power performance at low voltage for sub-6G applications. Featuring a 7 nm AlN barrier layer and the regrown n+-GaN Oh...
Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors
This paper presents a comprehensive study of silicon germanium (SiGe) cladded channels for stacked nanowires (NWs), focusing on morphological control and strain engineering to enhance device performan...
Negative differential resistance in a family of Fe3X4 (X <b>=</b> S, Se, Te) antiferromagnetic semiconducting nanowires
The experimentally observed 2D magnets have unlocked the possibility of realizing a stable long-range order in the low-dimensional limit, which also gives a boost to the family of 1D magnets. Recently...
Wide gap II-VI diodes with PbTe nano-inclusions for infrared detection and photovoltaics
We report on the fabrication and characterization of p–n diodes made from wide bandgap II-VI semiconductors (p-ZnTe/n-CdTe) containing nano-inclusions of narrow bandgap material (PbTe). The diodes are...
Impact ionization coefficients and excess noise characteristics of <i>Al0.85Ga0.15As0.07Sb0.93</i> on GaSb substrate
We report the multiplication properties of Al0.85Ga0.15As0.07Sb0.93 for use in separate absorption charge and multiplication avalanche photodiode lattice matched to a GaSb substrate. The demonstration...
Enhanced <i>p</i>-type GaN Ohmic contacts through strategic metal schemes and annealing
To enhance the efficiency and performance of p-type GaN-based power devices (diode, MOSFET) and p-channel transistors (p-FET), forming an Ohmic contact with low specific contact resistance (ρc) at p-G...
Application of probabilistic bits in measurement and sensing
We introduce a data-driven measurement and sensing paradigm that capitalizes on the limited sensing capabilities of probabilistic bits (p-bits). Unlike traditional methods that rely on the high qualit...
Megahertz cycling of ultrafast structural dynamics enabled by nanosecond thermal dissipation
Light–matter interactions are of fundamental scientific and technological interest. Ultrafast electron microscopy and diffraction with combined femtosecond-nanometer resolution elucidate the laser-ind...
Cs microcell optical reference at 459 nm with short-term frequency stability below 2 × 10−13
We describe the short-term frequency stability characterization of external-cavity diode lasers stabilized onto the 6S1/2−7P1/2 transition of Cs atoms at 459 nm, using a microfabricated vapor cell. Th...
Enhancing carrier dynamics via phase manipulation of dual-phase all-inorganic perovskites for high-performance photodetectors
Cesium lead bromide perovskites have demonstrated enormous potential in detecting applications, benefitting from their excellent optoelectronic properties and environmental stability. However, their i...
An on-chip compact Chebyshev filter for semiconductor quantum dots in cQED architecture
Circuit quantum electrodynamics (cQED) architecture enables long-range qubit coupling and nondemolition readout, with a key requirement of a small resonator photon leakage rate, κ. Several types of lo...
Understanding the microstructure effects of graphite electrode in lithium-ion batteries through multi-physics simulation
Graphite anodes are widely regarded as key components for achieving high-performance lithium-ion batteries. However, research on the multiscale effects of anode microstructures remains lacking in dept...
Enhanced rectification behavior and electrical properties of ZnO:Cu/ZnO heterojunctions via laser-induced doping and annealing treatments
Cu-doped ZnO:Cu/ZnO heterojunctions were fabricated via a three-step laser-induced doping technique. This study systematically investigated the electrical properties, microstructure, elemental valence...
Predicting a metallic carbon allotrope: <i>Pop</i>-graphite via Na–C compounds
Carbon allotropes continue to captivate research interest due to their structural diversity and remarkable properties. While diamond-like carbon structures have been extensively studied, bulk graphite...
Biorealistic response in a technology-compatible graphene synaptic transistor
Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents a graphene synaptic transistor based on all-technology-compatibl...
Forward bias stress-induced degradation mechanism in <i>β</i>-Ga2O3 SBDs: A trap-centric perspective
This study explores the impact of constant forward electrical stress on beta-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) from the prospective of defect evolution. Prolonged stress significa...
Hot-carrier photocatalysts with energy-selective contacts based on quantum wells and dots
Two types of hot-carrier photocatalysts (HCPCs) based on quantum well and quantum dot energy-selective contacts (ESCs) have been proposed. The transport equations for both types of devices are derived...