Biorealistic response in a technology-compatible graphene synaptic transistor

A Anastasia Chouprik (Moscow Institute of Physics and Technology , Dolgoprudny 141701,) E Elizaveta Guberna (Moscow Institute of Physics and Technology 1 , Dolgoprudny,) I Islam Mutaev (Moscow Institute of Physics and Technology 1 , Dolgoprudny,) I Ilya Margolin (Moscow Institute of Physics and Technology , Dolgoprudny 141701,) E Evgeny Guberna (Moscow Institute of Physics and Technology 1 , Dolgoprudny,) M Maxim Rybin (Prokhorov General Physics Institute of the Russian Academy of Sciences 2 , Moscow,)

Abstract

Artificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents a graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It is shown that the device geometry and interface properties can be designed to maximize the memory window and minimize power consumption. The device exhibits a virtually continuous range of multiple conductance levels, similar to synaptic weighting, which is achieved by gradual injection/emission of electrons into the floating gate and interface traps under the influence of an external electric field. Similar to the biological synapse, the transistor has short-term intrinsic dynamics that affects the long-term state. The temporal injection/emission dynamics of an electronic synapse closely resembles those of its biological counterpart and is exploited to emulate biorealistic behavior using a number of synaptic functions, including paired-pulse facilitation/depression, spike-rate-dependent plasticity, and others. Such a synaptic transistor can serve as a building block in hardware artificial networks for advanced information processing and storage.

Article Details

Volume / Issue Vol. 126, Issue 12
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

A

Anastasia Chouprik

Moscow Institute of Physics and Technology , Dolgoprudny 141701,

E

Elizaveta Guberna

Moscow Institute of Physics and Technology 1 , Dolgoprudny,

I

Islam Mutaev

Moscow Institute of Physics and Technology 1 , Dolgoprudny,

I

Ilya Margolin

Moscow Institute of Physics and Technology , Dolgoprudny 141701,

E

Evgeny Guberna

Moscow Institute of Physics and Technology 1 , Dolgoprudny,

M

Maxim Rybin

Prokhorov General Physics Institute of the Russian Academy of Sciences 2 , Moscow,