Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces

K Kentaro Yumigeta (Department of Materials Science & Engineering, University of Arizona 1 , Tucson, Arizona 85721,) J Jan Kopaczek (Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,) R Rounak Banerjee S Seyed Tohid Rajaei Moosavy (Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,) A Anvesh Yarra (Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University 2 , Tempe, Arizona 85287,) B Blake Povilus (Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,) H Hayley Ruddick (Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,) R Renee Sailus (Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,) M Mukesh Kumar (Graduate School of Human and Environmental Studies, Kyoto University, Yoshida Nihonmatsu Cho, Sakyo, Kyoto 606-8501, Japan) S Sushant Lakhavade (Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University 1 , Tempe, Arizona 85287,) Y Yunbo Ou Z Zafer Mutlu (Department of Materials Science & Engineering, University of Arizona 1 , Tucson, Arizona 85721,) S Seth Ariel Tongay

Abstract

We investigated the formation of Schottky barriers at the interface between rare-earth tritelluride (RTe3) crystals and n-type silicon (n-Si) substrates. This study explores the rectifying characteristics of RTe3/n-Si junctions (R = Dy, Ho, Er) and their relation to the charge density wave (CDW) transition. Using the thermionic emission model, we analyzed current–voltage (I–V) measurements to obtain the Schottky barrier height (ϕSBH) and the ideality factor (η). The temperature dependence of the extracted ϕSBH and η reveals kink features near the CDW transition temperature. The Schottky–Mott model is employed to explain these kink features in the derivatives of ϕSBH and 1/η and attributes them to changes in the work function of RTe3 during the CDW transition. Our findings suggest that Schottky junctions can be utilized to probe the electronic states of RTe3, enabling potential RTe3 device applications in electronics and optoelectronics.

Article Details

Volume / Issue Vol. 126, Issue 15
Published April 14, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (13)

K

Kentaro Yumigeta

Department of Materials Science & Engineering, University of Arizona 1 , Tucson, Arizona 85721,

J

Jan Kopaczek

Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,

R

Rounak Banerjee

S

Seyed Tohid Rajaei Moosavy

Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,

A

Anvesh Yarra

Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University 2 , Tempe, Arizona 85287,

B

Blake Povilus

Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,

H

Hayley Ruddick

Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,

R

Renee Sailus

Materials Science and Engineering, Fulton Schools of Engineering, Arizona State University 1 , Tempe, Arizona 85287,

M

Mukesh Kumar

Graduate School of Human and Environmental Studies, Kyoto University, Yoshida Nihonmatsu Cho, Sakyo, Kyoto 606-8501, Japan

S

Sushant Lakhavade

Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University 1 , Tempe, Arizona 85287,

Y

Yunbo Ou

Z

Zafer Mutlu

Department of Materials Science & Engineering, University of Arizona 1 , Tucson, Arizona 85721,

S

Seth Ariel Tongay