Applied Physics Letters

Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

T Tingang Liu (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) Z Zhiyuan Liu H Haicheng Cao (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) M Mingtao Nong (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) X Xiao Tang Z Zixian Jiang (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) G Glen Isaac Maciel García (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,) K Kexin Ren X Xiaohang Li (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,)

Abstract

Surface defects in Al-rich AlGaN Schottky barrier diodes (SBDs) contribute to high reverse leakage currents, which limit breakdown voltage—a critical parameter for power applications. In this study, atomic layer etching (ALE) was applied to the Schottky contact area to remove surface defects and native oxide. SBDs without ALE treatment exhibited a breakdown voltage of 308 V, whereas ALE-treated devices achieved a significantly improved breakdown voltage of 1205 V. By reducing interface traps and eliminating native oxide, ALE leads to lower leakage current and a more uniform Schottky barrier. These findings demonstrate that ALE is an effective surface treatment for enhancing the interface quality of III-nitride Schottky barrier diodes, paving the way for high-performance devices and promising advances in other nitride-based power electronics.

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Article Details

Volume / Issue Vol. 126, Issue 15
Published April 14, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (9)

T

Tingang Liu

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

Z

Zhiyuan Liu

H

Haicheng Cao

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

M

Mingtao Nong

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

X

Xiao Tang

Z

Zixian Jiang

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

G

Glen Isaac Maciel García

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,

K

Kexin Ren

X

Xiaohang Li

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

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