Applied Physics Letters
Articles in this Issue
A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure
Biosensors based on field-effect transistor (FET) have advantages of label-free detection, rapid response, small size, and good compatibility with semiconductor manufacturing process. However, their s...
Stochastic neuron based on dual-free-layer magnetic tunnel junction
In this Letter, we present a stochastic neuron implemented based on a dual-free-layer magnetic tunnel junction (MTJ). The device exhibits a stochastic switching behavior by utilizing coupled degrees o...
Shear horizontal mode surface acoustic wave resonator with ultra-high electromechanical coupling based on the X-cut LNOI acoustic platform
Shear horizontal surface acoustic wave resonators (SH-SAWRs) based on lithium niobate thin films on insulator (LNOI) platforms exhibit high electromechanical coupling and hold significant potential fo...
Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics
As an attractive lead-free thermoelectric material, GeTe has gained widespread interest. However, the extremely high hole concentration seriously limits the thermoelectric performance of pristine GeTe...
Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
This research proposes a selective polytetrafluoroethylene (PTFE) doping strategy to enhance the electrical stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In contrast to c...
Dynamic modulation of dual-band nonreciprocal radiation in a graphene–Weyl semimetal plasmonic structure
We introduce and develop a hybrid structure combining graphene and Weyl semimetal that is capable of achieving dynamically adjustable dual-band nonreciprocal radiation. The results reveal that the non...
A dual-band programmable metasurface for terahertz beam steering
Terahertz programmable metasurfaces hold significant promise for next-generation communications due to their capability to steer electromagnetic waves. However, most existing terahertz metasurfaces op...
Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures
Spin–orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption...
Double-layer LiNbO3 longitudinally excited shear wave resonators with ultra-large electromechanical coupling coefficient and spurious-free performance
This work proposes a double-layer lithium niobate (LiNbO3) longitudinally excited shear wave resonator with an ultra-large electromechanical coupling coefficient(keff2). When the rotation of the two f...
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were de...
A wideband reconfigurable metasurface for full-polarization GPR: Analysis and field trial
This paper proposes a wideband reconfigurable metasurface (WRM) for full-polarization ground-penetrating radar (FP-GPR). By adjusting the switching states of positive intrinsic negative diodes, the WR...
Frequency-multiplexed terahertz multiple vortex beam generation
We propose a simple method to generate a frequency-multiplexed terahertz multiple vortex beam using a spiral phase plate and a metallic mask. Using a broadband terahertz source, we experimentally demo...
Photoresponsivity of <i>p</i>-GaN HEMT-based ultraviolet photodetectors at low temperatures
In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited a...
Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices
Ionic migration in Hf0.5Zr0.5O2 (HZO) films play a crucial role in shaping the ferroelectric (FE) properties of HZO, although the underlying mechanisms remain poorly understood. We employed in situ ex...
Complex-valued Tellegen response
We consider a medium exhibiting nonreciprocal magneto-electric effect known as Tellegen response captured by the equations of axion electrodynamics. Here, we investigate the implications of the comple...
Magnetic response induced by charge doping in two-dimensional magnetic Cr2TiC2O2 MXene
Charge doping in two-dimensional materials, particularly in Cr-based MXene, a high spin-polarized material, induces magnetic responses that have significant potential for spintronic device application...
MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
The Schottky interface in metal–semiconductor contacts significantly affects and even dominates the performance of semiconductor devices. Therefore, accurately characterizing and regulating the Schott...
Phosphatized garnet-based solid electrolyte enables a sub-10-μm-thick lithium metal anode
Lithium metal anodes are widely regarded as the ultimate solution for high-energy-density batteries. However, their practical application has been hindered by the challenge of simultaneously achieving...
Acoustic selective skin effect in a coupled ring lattice
The exploration of non-Hermitian effects is essential for advancing both the theoretical understanding and practical applications of fundamental physics, and has garnered significant attention in the...
Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature
Growth of intrinsic hydrogenated amorphous silicon (i-a-Si:H) films in silicon heterojunction solar cells employing hot-wire chemical vapor deposition (HWCVD) technology does have cost advantages, yet...
Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor
Two-dimensional tellurium (Te) has been intensely studied in recent years due to its outstanding electrical properties and excellent air stability. Simple and effective contact engineering is highly d...