High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Abstract
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films were deposited using pulsed laser deposition. The device demonstrated an excellent breakdown voltage of ∼540 V at VGS = 0 V and an extremely low gate leakage current of ∼10−7 mA/mm. Additionally, it exhibited a low subthreshold swing (SS) of ∼167 mV/dec and a current on/off ratio of ∼106. The growth and fabrication of β-Ga2O3 MOSFETs on GaN-on-Si substrates are significant for high performance and their monolithic integration with GaN devices in future power-integrated circuits.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Mritunjay Kumar
Vishal Khandelwal
Department of Electrical and Computer Engineering, King Abdullah University of Science and Technology 2 , Thuwal 23955-6900,
Dhanu Chettri
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,
Ganesh Mainali
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,
Glen Isaac Maciel García
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,
Zuojian Pan
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,
Xiaohang Li
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,