Applied Physics Letters

Vol. 128, Issue 7 Issue 7 2026
52
Articles

Articles in this Issue

Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests

Chengbing Pan, Ruomeng Zhang, Xueyan Li et al. Feb 16, 2026 10.1063/5.0311656

In this study, the instability mechanisms of dynamic on-resistance (RDSON) of p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) were investigated under power cycling tests (PCTs). An ano...

Digital generation of random beams with super-Rayleigh intensity statistics

Yimeng Zhu, Yonglei Liu, Jiahui Shen et al. Feb 16, 2026 10.1063/5.0315019

We present a general yet simple method for generating partially coherent Schell-model beams with controllable non-Gaussian intensity statistics. With our method, the second-order field statistics prop...

Switching of perpendicular magnetization via orbital-current-induced torque from light metal Ru

Rui Hou, Jiasen Cao, Jinnan Liu et al. Feb 16, 2026 10.1063/5.0313505

Orbital torque (OT) harnesses orbital currents to electrically encode spin states, offering a promising route toward low-power spintronic devices. However, the microscopic mechanisms governing OT effi...

Lattice dynamics of piezoelectric response of organic–inorganic hybrid perovskites

Zun-Yi Deng, Qixiang Yin, Li Luo et al. Feb 16, 2026 10.1063/5.0312220

Hybrid organic–inorganic perovskites (HOIPs) exhibit substantial piezoelectric coefficients, holding significant potential as a cost-effective, environmentally benign, lightweight, and flexible piezoe...

A proposal for full-field microwave polarization measurement in a Rydberg-atom mixer assisted by grating

Zheng Yin, Wengeng Wang, Di Meng et al. Feb 16, 2026 10.1063/5.0303309

A scheme of grating-assisted full-field (0°–180°) microwave (MW) polarization measurement is theoretically proposed using a Rydberg-atom mixer via electromagnetically induced transparency in the absen...

First observations of avalanche-like behavior in p-GaN gate HEMTs with the buffer avalanche triggered layer

Cheng Yu, WanJun Chen, Fangzhou Wang et al. Feb 16, 2026 10.1063/5.0293431

A p-GaN gate high electron mobility transistor with the buffer avalanche triggered layer (BATL-HEMT) is experimentally demonstrated to exhibit repetitive avalanche-like behavior. One of the major limi...

Strain-enabled polarity reversal of transport in Bi/MoS2 van der Waals heterostructures

Jingqi Yuan, Liyuan Kou, Mengqiu Long Feb 16, 2026 10.1063/5.0312980

Strain engineering serves as a powerful strategy for modulating the electronic properties of semiconductors and enhancing device performance. In this work, we employ first-principles calculations to s...

Crystallization modulation through optimized SnO2 ETL enables over 20% efficiency in HTM-free carbon electrode perovskite solar cells

Yiqiong Zhang, Xiangqian Cui, Kelang Wang et al. Feb 16, 2026 10.1063/5.0313807

Tin dioxide (SnO2) is the most widely used electron transport layer (ETL) in perovskite solar cells (PSCs), and its characteristics play a crucial role in both perovskite crystallization and device pe...

GHz ultrahigh-order harmonic laser output based on nonlinear multimode interference

Chao Lv, Bin Yin, Guofeng Sang et al. Feb 16, 2026 10.1063/5.0307645

Optical frequency combs (OFCs) with GHz repetition rates are being widely used. They are applied in high-speed fiber communications, microwave photonics, and precision spectroscopy. However, achieving...

Enhancement-mode operation in degenerate In2O3 thin-film transistors via local carrier suppression

Jiyoung Bang, Seungjae Lee, Kyubin Hwang et al. Feb 16, 2026 10.1063/5.0296134

Oxide semiconductors have recently emerged as promising back-end-of-line compatible channel materials for monolithic 3D integration, addressing limitations such as scalability and thermal constraints...

High-efficiency and long-distance quantum memory-assisted device-independent quantum secret sharing with single-photon sources

Qi Zhang, Jia-Wei Ying, Shi-Pu Gu et al. Feb 16, 2026 10.1063/5.0307766

Quantum secret sharing (QSS) plays a critical role in building the distributed quantum networks. Device-independent (DI) QSS provides the highest security level for QSS. However, the photon transmissi...

High-performance nonlinear photodetector based on MoTe2/CdS/ReS2 dual heterojunction for polarization-visible light imaging

Ran Ma, Qiuhong Tan, Peizhi Yang et al. Feb 16, 2026 10.1063/5.0317577

Photodetectors with high sensitivity and polarization selectivity are critical for applications ranging from environmental monitoring to advanced imaging. Transition metal dichalcogenides (TMDs) offer...

Experimental investigation of low-frequency noise in quantum-cascade detectors

Tatsuo Dougakiuchi, Kazuue Fujita, Yutaka Kadoya Feb 16, 2026 10.1063/5.0299261

Frequency-dependent low-frequency noise in mid-infrared quantum-cascade (QC) detectors, previously considered negligible, was experimentally investigated under the condition of high device resistance...

Room-temperature-grown CsAg2I3 single-crystal microrods for high-performance heterostructured UV photodetection and imaging

Zhimin Ma, Wangbing Xiong, Zhinuo Qiu et al. Feb 16, 2026 10.1063/5.0313221

Lead-free metal halide perovskites, especially with low-dimensional structures, show great potential in fabricating high-performance optoelectronic devices due to their nontoxicity and extraordinary p...

Observation of spatial distribution of dimensionless figure of merit in powder-sintered Bi2Te3-based bulk thermoelectric materials via time-domain impedance spectroscopy

Hitoyuki Sato, Yasuhiro Hasegawa Feb 16, 2026 10.1063/5.0313465

The time-domain impedance spectroscopy (TDIS) method enables direct determination of the dimensionless figure of merit (zT) from a single thermoelectric specimen, eliminating uncertainties associated...

Laser annealing enabled resistance reduction and stable frequency tuning of superconducting qubits

Lei Du, Hao-Ran Tao, Chi Zhang et al. Feb 16, 2026 10.1063/5.0303700

The scalability of superconducting quantum processors is hindered by frequency collisions among qubits, calling for precise and reliable frequency tuning techniques. Here, we develop a laser annealing...

Pressure-driven emission enhancement in zero-dimensional [TPPen]2SbBr5 through the lone pair-π interaction

Jinfei Wu, Zirun Chen, Qingyi Luo et al. Feb 16, 2026 10.1063/5.0309819

Low-dimensional hybrid metal halides (LDMHs) exhibit markedly distinctive optoelectronic properties due to their unique quantum effects and strong exciton binding energies. Given the pressing need to...

Depth-resolved thermal conductivity of HFCVD diamond films via square-pulsed thermometry

Kexin Zhang, Xiaosong Han, Ershuai Yin et al. Feb 16, 2026 10.1063/5.0314415

The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigat...

Engineering charge transfer and indirect exciton dynamics in 0D/2D heterostructures via hydrostatic pressure

Fuxiang Ma, Ruiqi Wu, Bowen Guan et al. Feb 16, 2026 10.1063/5.0312495

This study systematically investigates the charge transfer dynamics in 0D/2D heterostructures composed of CdSe/ZnS quantum dots and WS2 using high-pressure femtosecond pump–probe techniques. Steady-st...

Impact of Néel and Brownian relaxation on magnetization response of magnetic nanoparticles based on magnetic field strength

Shuto Hayashi, Haruki Goto, Masato Futagawa et al. Feb 16, 2026 10.1063/5.0318555

Magnetic relaxation of magnetic nanoparticles governs their dynamic response under external magnetic fields and plays a critical role in biomedical applications such as magnetic particle imaging and h...

Virial stress unveils atomic strain governing interfacial thermal rectification

Wenjia Gu, Chunyang Zhang, Yitao Si et al. Feb 16, 2026 10.1063/5.0309323

Thermal rectification is a phenomenon in which heat flow exhibits a preferential direction and has attracted significant attention due to its potential applications in nanoscale thermal management, su...

Formation and relief of epitaxial strain in ultra-thin <b> <i>α</i> </b> -(Al,Ga)2O3 films on a-plane sapphire under biaxial stress

Michael Hanke, Anna Reis, Achim Trampert Feb 16, 2026 10.1063/5.0294624

We have studied strain formation and relief in thin α-(AlxGa1−x)2O3 layers iso-structurally grown on a-plane sapphire. In a complementary approach of in situ synchrotron-based surface x-ray diffractio...

Signatures of noncollinear ferrimagnetism in the van der Waals semiconductor CrSCl

Dingyi Yang, Jiawei Jiang, Yong Wang et al. Feb 16, 2026 10.1063/5.0298026

Noncollinear ferrimagnets combining the advantages of both controllable net magnetization and ultrafast spin dynamics are promising for spintronic and spin-torque devices. However, they are rare in th...

Robust wave splitters based on scattering singularities in complex non-Hermitian systems

Jared Erb, Nadav Shaibe, Tsampikos Kottos et al. Feb 16, 2026 10.1063/5.0277128

We have discovered specific conditions for generic scattering systems to act as wave splitters that are robust to any change in relative amplitude or phase of an arbitrary injected waveform. Specifica...

Controlling the competition between polar and antipolar structures by rumpling in Ruddlesden–Popper layered nitride La3W2N7

Zun-Yi Deng, Gang Tang, Jiawang Hong Feb 16, 2026 10.1063/5.0312314

The competition between interlayer rumpling and rotations is crucial for understanding the origin of hybrid improper ferroelectricity for Ruddlesden–Popper (RP) oxides, but the corresponding relations...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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