Applied Physics Letters
Articles in this Issue
AlxGa1 <b>−</b> xN (0.7 <b>&lt;</b> x <b>&lt;</b> 1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2
High Al-content AlxGa1−xN (0.7 &lt; x &lt; 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent re...
Suppressed precipitates dissolution and dislocation loop growth in laser shock peened Inconel 718
Inconel 718 alloy is a critical candidate material for Gen-IV nuclear reactors. However, its high-temperature mechanical performance is compromised under irradiation due to irradiation softening and e...
Electronic structure and optical properties of doped Cs3Cu2I5 for scintillator: A first-principles study
Cs3Cu2I5 has emerged as a prominent candidate for next-generation scintillators. To further enhance its scintillation performance, this study systematically investigated the electronic structure and o...
Enhanced optical response of a type-II superlattice mid-wave infrared detector enabled by ring-shaped metasurface structures
To overcome photon-capture bottlenecks and low external quantum efficiency in type-II superlattice (T2SL) infrared detectors, we propose and experimentally realize a metal–semiconductor–metal (MSM) co...
Ultraflexible and stretchable multifunctional synaptic memristor by molecular layer deposition
Stretchable memristors are anticipated to be pivotal in the development of next-generation wearable and implantable electronic devices. However, the challenging fabrication requirements and restricted...
Orientation-tunable local crystallization of Si films enabled by atomic imprint crystallization
In this paper, we demonstrate area-selective crystallization of amorphous Si into tunable crystal orientations enabled by atomic imprint crystallization (AIC), where an amorphous Si layer is crystalli...
Proximity-induced two-dimensional superconductivity in a TaIrTe4/NbSe2 heterostructure
Coupling topological surface states with superconductivity provides a powerful route to realizing a topological superconducting phase that can host Majorana zero modes and support fault-tolerant topol...
Temperature-dependent resistivity and Seebeck coefficient in epitaxial La0.5Sr0.5CoO3 thin film
La0.5Sr0.5CoO3 (LSCO55) thin film with a thickness of 13 nm was epitaxially grown on LaAlO3 (001) substrate by pulsed laser deposition. Its structural properties as well as its temperature-dependent e...
Direct characterization of arbitrary multi-particle states with ancilla-only measurements
The measurement of unknown quantum states is crucial in quantum information science. Standard quantum state tomography can retrieve information regarding unknown quantum states. However, as the number...
Special topic on high-performance thin-film indoor photovoltaics
Spin–phonon coupling in two-dimensional antiferromagnet Fe0.25TaSe2
The coupling between phonon and spin gives rise to intriguing phenomena, including phonon Hall effect, spin Seebeck effect, and charge density wave (CDW). Here, we investigate spin–phonon coupling and...
Quantum geometry in correlated electron phases: From flatband to dispersive band
Quantum geometry, describing the geometric properties of the Bloch wave function in momentum space, has recently been recognized as a fundamental concept in condensed matter physics. The flatband syst...
Dual-function GaN QWD chip for real-time joint flexion and gesture recognition
GaN-based quantum well diodes (QWDs) exhibit the physical phenomenon of simultaneous emission and detection, offering a promising pathway toward compact, multifunctional optoelectronic platforms. We p...
Vertical diodes on n-type β-Ga2O3 using p-Cu2O for heterojunction formation and edge termination
Lack of viable p-type doping in ultra-wide bandgap β-Ga2O3 necessitates the use of p-type materials to form p–n heterojunction diodes (HJDs). This study demonstrates a comparative electrical performan...
Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage
In this work, double-barrier AlGaN/GaN high-electron-mobility transistors (DB-HEMTs) are investigated to simultaneously achieve ultra-high two-dimensional electron gas (2DEG) density and enhanced brea...
Low-threshold single-mode lasing in high-quality all-inorganic CsPbCl3 perovskite microplates
All-inorganic lead halide perovskites (CsPbX3) have emerged as game-changing gain media for micro-lasers due to their facile synthesis, ultra-high photoluminescence quantum yield, and excellent spectr...
Direct red-detuned soliton generation via lower-power auxiliary laser assistance
Integrated soliton microcombs have emerged as a promising solution for applications in precision metrology, high-speed optical communications, and integrated photonics. In practical deployment of soli...
Simultaneous measurement of the Lorentzian and Gaussian linewidths of laser
Linewidth is a key parameter reflecting the coherence of single-frequency lasers. While the linewidth contributed by white noise has been widely studied, the effect of nonwhite noise, mainly flicker n...
Development of high-thermal conductive Ag@diamond composite sintering paste and its application in power modules
Diamond, known for its exceptional thermal conductivity and low coefficient of thermal expansion, offers significant advantages as a filler in composite solder pastes for high-power electronic devices...
Stress-induced efficiency degradation mechanism of InGaN-based red micro-LEDs depending on their size
This study systematically investigates the influence of forward current-induced stress on the optoelectronic performance of InGaN/GaN-based red micro light-emitting diodes with pixel sizes of 20 × 20...
Improved electro-actuation performance of polyurethane-based dielectric elastomer under ultra-low electric fields via introducing soft functional filler
Dielectric elastomers (DEs) show promise in applications such as soft robots, artificial muscles, and sensors due to their large actuation strain and high energy density. However, such large actuation...
ZnCdSe/ZnS quantum dot hybrid film organic optoelectronic synaptic transistor for high-efficiency neuromorphic computing
Optoelectronic synaptic transistors have great potential for application in neuromorphic computing, and by integrating sensing and computing capabilities onto a single optoelectronic synaptic transist...
Near-ultraviolet resonant-cavity light-emitting diode grown on Si
Near-ultraviolet (NUV) light sources offer a range of notable advantages in industrial, scientific, and medical fields. In this study, we successfully fabricated AlGaN-based NUV resonant-cavity light-...
<i>In situ</i> spectroscopic ellipsometry for atomic layer processes on III–V interfaces using critical points
Plasma-enhanced atomic layer processing of III–V semiconductors requires precise control of plasma–surface interactions to achieve clean oxide-free interfaces, but conventional characterization method...
Laser-induced ultrasound via broadband absorption in Al-nanoparticle-embedded nanoporous alumina
To address the limitations of single-wavelength absorption at the resonant peak in metal-based photoacoustic materials, a composite structure of aluminum nanoparticle-nanoporous anodic alumina oxide a...