Temperature-dependent resistivity and Seebeck coefficient in epitaxial La0.5Sr0.5CoO3 thin film
Abstract
La0.5Sr0.5CoO3 (LSCO55) thin film with a thickness of 13 nm was epitaxially grown on LaAlO3 (001) substrate by pulsed laser deposition. Its structural properties as well as its temperature-dependent electronic transport properties were investigated. X-ray diffraction confirmed single-phase “cube-on-cube” epitaxy with coherent in-plane strain. The film exhibits a low resistivity of ∼270 μΩ cm at 300 K and a quadratic temperature dependence below ∼200 K, indicating metallic behavior. The Seebeck coefficient shows two sign crossovers at ∼24 and ∼175 K with T3 dependence at low temperature. These findings demonstrate robust metallic transport in LSCO55 thin film and show that the thermoelectric response is not single-carrier-like: two Seebeck sign changes and a low-temperature dependence in T3 indicate competing carrier terms and a possible phonon drag contribution, shaped by magnetic ordering/disorder.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
Tongwei Zhu
Institut des Nanotechnologies de Lyon - INL, UMR 5270, CNRS, Ecole Centrale de Lyon, CPE, INSA de Lyon, UCBL 1 , 36 avenue Guy de Collongue, 69134 Ecully Cedex,
Max Marrot
Institut Lumière Matière - ILM, UMR 5306, CNRS, UCBL 2 , 10 rue Ada Byron, 69622 Villeurbanne Cedex,
Régis Debord
Institut Lumière Matière - ILM, UMR 5306, CNRS, UCBL 2 , 10 rue Ada Byron, 69622 Villeurbanne Cedex,
Stéphane Pailhès
Institut Lumière Matière - ILM, UMR 5306, CNRS, UCBL 2 , 10 rue Ada Byron, 69622 Villeurbanne Cedex,
Nathalie Lemée
Laboratoire de physique de la matière condensée – LPMC, UPJV, UR 2081 3 , 33 rue Saint-Leu, 80039 Amiens Cedex 1,
Romain Bachelet
Institut des Nanotechnologies de Lyon - INL, UMR 5270, CNRS, Ecole Centrale de Lyon, CPE, INSA de Lyon, UCBL 1 , 36 avenue Guy de Collongue, 69134 Ecully Cedex,