AlxGa1 <b>−</b> xN (0.7 <b>&lt;</b> x <b>&lt;</b> 1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2
Abstract
High Al-content AlxGa1−xN (0.7 &lt; x &lt; 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (∼14 kA/cm2) and a high breakdown field of ∼8.3 MV/cm. The SBDs also exhibited low ideality factors of (η ∼ 1.2) with a high Schottky barrier height (Φb ∼ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
Tariq Jamil
Department of Electrical Engineering, University of South Carolina 1 , Columbia, South Carolina 29208,
Abdullah Al Mamun Mazumder
Department of Electrical Engineering, University of South Carolina 1 , Columbia, South Carolina 29208,
Mafruda Rahman
Department of Electrical Engineering, University of South Carolina 1 , Columbia, South Carolina 29208,
Muhammad Ali
Grigory Simin
Department of Electrical Engineering, University of South Carolina 1 , Columbia, South Carolina 29208,
Asif Khan