Applied Physics Letters

Erratum: “Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing” [Appl. Phys. Lett. <b>127</b> , 182103 (2025)]

T Tomoya Okuda (Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,) S Shunsuke Ota (Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,) K Kouei Kubota (Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1, Hongo, Bunkyo, Tokyo 113-8656,) Y Yusuke Wakamoto (Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , Bunkyo, Tokyo 113-8656,) S Shinsuke Hashimoto (Institute of Engineering Innovation, School of Engineering, The University of Tokyo 3 , Tokyo 113-8656,) T Takehito Seki S Satoko Toyama (Institute of Engineering Innovation, School of Engineering, The University of Tokyo 2 , Tokyo 113-8656,) N Naoya Shibata (Institute of Engineering Innovation, School of Engineering) T Takahiko Kawahara (Transmission Devices Laboratory, Sumitomo Electric Industries Ltd 4 ., Yokohama 244-8588,) K Kozo Makiyama (Transmission Devices Laboratory, Sumitomo Electric Industries Ltd 4 ., Yokohama 244-8588,) K Ken Nakata K Kazuhisa Ikeda (Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,) T Takuya Maeda A Atsushi Kobayashi (Department of Chemistry Faculty of Science Hokkaido University Sapporo Hokkaido Japan)
Download PDF View Original
APA MLA Chicago BibTeX RIS

Article Details

Volume / Issue Vol. 128, Issue 19
Published May 11, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (14)

T

Tomoya Okuda

Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,

S

Shunsuke Ota

Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,

K

Kouei Kubota

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1, Hongo, Bunkyo, Tokyo 113-8656,

Y

Yusuke Wakamoto

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , Bunkyo, Tokyo 113-8656,

S

Shinsuke Hashimoto

Institute of Engineering Innovation, School of Engineering, The University of Tokyo 3 , Tokyo 113-8656,

T

Takehito Seki

S

Satoko Toyama

Institute of Engineering Innovation, School of Engineering, The University of Tokyo 2 , Tokyo 113-8656,

N

Naoya Shibata

Institute of Engineering Innovation, School of Engineering

T

Takahiko Kawahara

Transmission Devices Laboratory, Sumitomo Electric Industries Ltd 4 ., Yokohama 244-8588,

K

Kozo Makiyama

Transmission Devices Laboratory, Sumitomo Electric Industries Ltd 4 ., Yokohama 244-8588,

K

Ken Nakata

K

Kazuhisa Ikeda

Department of Materials Science and Technology, Tokyo University of Science 1 , Tokyo 125-8585,

T

Takuya Maeda

A

Atsushi Kobayashi

Department of Chemistry Faculty of Science Hokkaido University Sapporo Hokkaido Japan

Related Articles from this Journal

Interface engineering with an rGO electron extraction layer for high-efficiency and stable Cu2ZnSnS4-based photocathode

Zhenyan Xiao, Piao Zhang et al. Aug 2026 10.1063/5.0312010

Transmission diffuse EUV scattering by nanoscale Lamb waves in thin membranes

Alessandra Milloch, Naman Agarwal et al. Aug 2026 10.1063/5.0343558

Optimized Nb-doped SnO2 buffer layer for enhanced carrier extraction and Sb2S3 photovoltaic responses

Xinsheng Liu, Xiangyang Liu et al. Aug 2026 10.1063/5.0343471

Exceptionally high thermoelectric power factors at low temperatures in heavily doped p- and n-type Ge-rich Ge1−xSnx films

Masashi Kurosawa, Takayoshi Katase et al. Aug 2026 10.1063/5.0346412

Unlocking room-temperature magnetoelectricity in Ba1.5Sr1.5-based Z-type hexaferrites via magnetic anisotropy modulation

Huantong Wu, Jun Li et al. Aug 2026 10.1063/5.0314711