Applied Physics Letters
Articles in this Issue
Gate-tunable WSe2/Bi2Te2Se van der Waals heterostructure photodetectors for broadband photodetection
Band offset engineering of van der Waals heterostructures is a critical strategy to broaden the response range of optoelectronic devices and realize multifunctional device applications, and the adopti...
Superluminal spacetime crystals induced by anomalous velocity modulation
Time-modulated media offer powerful opportunities for controlling light, yet extending such concepts to optical frequencies has remained challenging. Here, we propose a different route to photonic spa...
Origin of threshold voltage instability in vertical GaN trench MOSFETs characterized by charge pumping
We systematically investigate threshold voltage (Vth) instability in vertical GaN trench MOSFETs on sapphire using a charge pumping (CP) method combined with pulsed gate measurements. A negative Vth s...
Enhancing nonreciprocal filtering through surface modification of ferrimagnetic insulators
To address the significant reduction in magnetostatic surface waves (MSSW) nonreciprocity as ferrimagnetic insulators are scaled to the nanometer level, this study demonstrates an effective interface...
Oxygen vacancies-assisted carrier transport toward improved Au/HfO2−x/Si Schottky photodetectors
Au/Si Schottky junctions are important building blocks for fabricating inexpensive and efficient photodetectors (PDs), whereas Si surface defects induce severe interfacial non-radiative recombination...
Self-powered broadband UV–NIR photodetector based on NbOCl2/WSe2 van der Waals heterostructure
Achieving self-powered operation together with broadband photodetection in a single device remains a key challenge for next-generation optoelectronic systems, primarily due to limited spectral respons...
Electromechanical switching and momentum-selective transport in geometry-defined blue phosphorus homojunctions
Developing intrinsic homojunctions without chemical heterogeneity remains a key challenge for the development of future two-dimensional devices. Here, we report a geometry-defined metal–semiconductor–...
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Carbon-doped GaN is a promising material for sub-bandgap triggered optical switches. When incorporated in GaN, carbon introduces deep compensating centers that enable defect-mediated extrinsic photoco...
Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) <b> <i>β</i> </b> -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy
We demonstrate that (01¯1¯) [or (011)] β-Ga2O3 is a promising orientation for halide vapor phase epitaxy (HVPE) homoepitaxial growth for realization of thick epitaxial layers with low donor concentrat...
Characterization of trap dynamics via transient response in amorphous InGaZnO thin-film transistors
In this paper, the transient behavior of amorphous InGaZnO thin-film transistors is quantitatively investigated to clarify the charge trapping dynamics limiting high-speed operation. The transient dra...
Toward enhanced photocatalysis: High-mobility two-dimensional polar heterojunctions for water splitting
The efficiency of overall water splitting is often hampered by the bandgap constraint of photocatalysts, restricting solar energy harvesting. To address this issue, two-dimensional (2D) polar material...
Cryogenic angle-resolved Brillouin–Mandelstam spectroscopy of surface and bulk acoustic phonons in diamond
We used angle-resolved Brillouin–Mandelstam light-scattering spectroscopy to monitor surface and bulk acoustic phonons in diamond along the ⟨100⟩ and ⟨110⟩ crystallographic directions across a tempera...
Beyond one-thousandth energy resolution with an AlMn TES detector
The superconducting Transition-Edge Sensor (TES) is a critical technology for next-generation x-ray spectrometers, known for its exceptional energy resolution. In the last decade, TESs based on AlMn a...
Tunable ionic conductivity in halide electrolytes through cation ion exchange and channel engineering
Halide solid electrolytes hold great promise for all-solid-state batteries, yet their ionic conductivity requires further optimization. This study demonstrates a powerful strategy for tuning ionic tra...
Revisiting phonon thermal transport in perovskite CsPbBr3 crystals: Critical role of temperature-dependent quartic anharmonicity
Understanding the origin of ultralow lattice thermal conductivity (κL) in crystals is crucial for the development of advanced thermoelectric and thermal management materials. This study systematically...
Axial localization enabled by quantum correlations
Accurate axial localization is essential for identifying the object position along the optical axis, which directly impacts the resolution and fidelity of image reconstruction. However, conventional l...
Room-temperature, continuous wave lasing in planar microcavities with quantum dots
High-quality planar cavities with low-absorption mirrors based on Al0.2Ga0.8As/Al0.9Ga0.1As layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density a...
History-dependent filament configuration in multiterminal electrothermal memristors
Electrothermal memristors operate by a resistive switching mechanism based on Joule heating. During the switching process, metallic filaments form between the electrical contacts in a highly reversibl...
Multimodal liquid transport enabled by <i>Crassula muscosa</i> shoot inspired ratchet-shaped leaves channel
Despite advances in bioinspired liquid transport systems, most reported surfaces relying on static wettability gradients or asymmetric structures are limited to single-mode transport, while multimodal...
Enhancing carrier transport in Cs2AgBiBr6 double perovskites through multifunctional ferroelectric polymer doping
Cs2AgBiBr6 lead-free double perovskites are promising materials for optoelectronic applications but suffer from limited carrier transport due to defects and strong electron–phonon coupling. In this wo...
Unraveling the microscopic mechanism of thermal conductivity in 2D COF–C60 assemblies via machine-learning potentials
Covalent organic framework–fullerene assemblies (C60@COF) are promising for energy storage and optoelectronics, but the microscopic mechanisms governing their thermal conductivity (κ) remain poorly un...
Enhancing electrical properties of selectively grown in-plane InAs nanowires using InGaAs buffer and capping layers
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices....
InAs/InGaAs quantum dots with room temperature photoluminescence at 1380 nm by Sb surfactant-induced strain relaxation
This study examined the effects of Sb exposure on the optical properties of InAs/InGaAs quantum dot-in-a-well (QDWELL) heterostructures. A two-step strain compensation scheme was employed, with InAs Q...
Extended depth-of-field volumetric microscopy based on bidirectionally separated nonparaxial self-bending beam
We propose a detection-side volumetric imaging strategy based on a nonparaxial self-bending beam (SBB), achieving an extended depth-of-field (DOF) of 70 μm in a 100×, numerical-aperture (NA) 1.45 fluo...
Electrically coupled NiFe2O4/Ti3C2 hybrids with enhanced dielectric and energy storage performance
NiFe2O4/Ti3C2 hybrid composites exhibit superior dielectric and pseudocapacitive properties, due to highly efficient interfacial charge transport. Conventional spinel ferrites suffer from intrinsicall...