Room-temperature, continuous wave lasing in planar microcavities with quantum dots
Abstract
High-quality planar cavities with low-absorption mirrors based on Al0.2Ga0.8As/Al0.9Ga0.1As layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and the quality-factor at the threshold are (4.2 ± 0.3) kW/cm2 and (6800 ± 220). Increasing the pump level above two thresholds results in an enlargement in the quality-factor to at least 19 000. Efficient lateral heat dissipation in planar semiconductor microcavities is confirmed by the low mode-energy shift of approximately 400 μeV at two lasing thresholds.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
A. Babichev
Ioffe Institute 1 , 26 Polytechnicheskaya St., 194021 Saint Petersburg,
M. Bobrov
Ioffe Institute 1 , 26 Polytechnicheskaya St., 194021 Saint Petersburg,
A. Vasil'ev
Ioffe Institute 1 , 26 Polytechnicheskaya St., 194021 Saint Petersburg,
S. Blokhin
Ioffe Institute 1 , 26 Polytechnicheskaya St., 194021 Saint Petersburg,
N. Maleev
Ioffe Institute 1 , 26 Polytechnicheskaya St., 194021 Saint Petersburg,
I. Makhov
HSE University 2 , 3A Kantemirovskaya St., 194100 Saint Petersburg,
N. Kryzhanovskaya
HSE University 2 , 3A Kantemirovskaya St., 194100 Saint Petersburg,
L. Karachinsky
ITMO University 3 , 49 Kronverksky Pr., 197101 Saint Petersburg,
I. Novikov
ITMO University 3 , 49 Kronverksky Pr., 197101 Saint Petersburg,
A. Egorov
ITMO University 3 , 49 Kronverksky Pr., 197101 Saint Petersburg,