<i>In situ</i> electric field-assisted curing enables low dielectric constant and loss through polarization suppression

T Tengyu Li (Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,) L Liuyin Li (Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,) J Jiayu Su A Arif Hussain S Suibin Luo (Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,) S Shuhui Yu

Abstract

Low-dielectric materials are crucial for reducing RC delay in high-density integrated circuits. Here, we report an electric field-assisted in situ curing strategy for dicyclopentadiene-based epoxy films to achieve reduced dielectric constant (εr) and loss tangent (tan δ). The applied electric field modulates local chain conformations and promotes crystalline microdomain formation, effectively suppressing dipolar polarization. Under an electric field of 6 kV mm−1, εr and tan δ are reduced by up to 8.5% and 78.9% at 102 Hz, and by 7.8% and 7.1% at 5 GHz, respectively. This work provides a unique route for tuning dielectric properties via electric field-induced structural control, offering potential for advanced electronic packaging applications.

Article Details

Volume / Issue Vol. 129, Issue 5
Published August 03, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

T

Tengyu Li

Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,

L

Liuyin Li

Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,

J

Jiayu Su

A

Arif Hussain

S

Suibin Luo

Center for Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences 1 , Shenzhen 518055,

S

Shuhui Yu