Applied Physics Letters
Articles in this Issue
Improving the interfacial thermal conductance between Cr–Ni alloy and dielectric by a metal interlayer
As the size of transistors in electronic devices continues to shrink and power density increases, the effective thermal management has become essential. The interfacial thermal resistance now represen...
Electron mobility in AlN from first principles
Aluminum nitride is a promising ultra-wide bandgap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achievin...
High-performance GaN-based green laser diodes with low thermal degradation via hybrid MOCVD-MBE growth
The high-temperature growth of p-type layers via metal-organic chemical vapor deposition (MOCVD) often leads to thermal degradation of the InGaN quantum wells (QWs) in green laser diodes. In this stud...
All-optical tuning of cascaded Raman lasing in silica microsphere
Whispering-gallery mode (WGM) microcavities are known for their high-quality factor, small mode volume, and high power density. These properties have made them a subject of significant interest in bot...
Tunable flatband Friedrich–Wintgen bound states in the continuum in graphene plasmonics
The flatband states, especially flatband quasi-bound states in the continuum (BIC) in periodic graphene nanostructures, are investigated. For a resonant plasmonic waveguide grating consisting of monol...
Enhanced quasiparticle relaxation in a superconductor via the proximity effect
Quasiparticle dynamics have been identified as an important factor in the operational performance of superconductors in quantum computing and sensing applications. In order to study such dynamics, we...
Endogenic ion–electron coupling effect in rGO–Fe2O3 heterostructure for optoelectronic neuromorphic memcapacitor
Taking inspiration from biological synapses, memcapacitors communicating in the ionic language gain more spotlight for neuromorphic computing. However, creating an ion-based memcapacitor that is sensi...
Nanoscale <i>p–n</i> junctions based on conductive domain walls in lithium niobate films on insulators
Conductive domain wall has emerged as a promising candidate for building blocks in nanoelectronics. We demonstrate the fabrication of domain wall p–n junctions by configuring n-type and p-type conduct...