Nanoscale <i>p–n</i> junctions based on conductive domain walls in lithium niobate films on insulators

Abstract

Conductive domain wall has emerged as a promising candidate for building blocks in nanoelectronics. We demonstrate the fabrication of domain wall p–n junctions by configuring n-type and p-type conductive domain walls in an x-cut lithium niobate film on an insulator with an electrically biased probe tip of atomic force microscopy. Taking advantage of the nanoscale nature of domain walls, domain wall p–n junctions with a feature size of a hundred of nanometers are demonstrated.