Applied Physics Letters
Articles in this Issue
Interfacial-interaction-modulated topological Hall effect in manganite/iridate heterostructures
Interface-induced magnetic skyrmions, frequently observed in ferromagnetic/heavy metal heterostructures, hold significant promise for applications in spintronic devices. Recent studies have also revea...
Oxygen vacancy control engineering in Ga2O3/4H-SiC Schottky rectifiers
This work investigates oxygen vacancy (VO) engineering in Ga2O3/4H-SiC heterojunction Schottky barrier diodes (HJ-SBDs) through post-deposition O2 annealing to enhance breakdown performance. Aerosol-d...
The role of active Navier–Stokes angular momentum in identifying small-scale turbulence behavior
This work investigates the role of an active Navier–Stokes angular term, inherent in micropolar theory, in characterizing small-scale turbulence behavior. By incorporating the micropolar viscosity rat...
Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution
We provide direct evidence of two-dimensional hole gas (2DHG) conduction occurring in parallel with the two-dimensional electron gas (2DEG) channel in AlN/GaN/AlN high-electron-mobility transistors, u...
Interlayer interaction controllable multiple anomalous Hall effect in bilayer Janus structures
The valley quantum anomalous Hall effect (VQAHE) is of great importance in condensed matter physics and materials science, yet it rarely occurs in intrinsic materials and typically relies on persisten...
Study on the single-event burnout mechanism of <i>β-</i> Ga2O3 heterojunction diodes under heavy-ion irradiation
In this Letter, the single-event burnout (SEB) mechanism of β-Ga2O3 heterojunction diodes (HJDs) under irradiation with 1260 MeV krypton (Kr) ions has been investigated. A typical SEB phenomenon was o...
Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift
Phase-change memory (PCM) has emerged as a promising non-volatile memory technology, offering significant potential for next-generation artificial intelligence and neuromorphic computing systems. Howe...
Study of beryllium acceptor states in aluminum nitride via cathodoluminescence analysis
We report a comprehensive study of beryllium (Be) acceptor states in aluminum nitride (AlN) using steady-state cathodoluminescence (CL) spectroscopy. A sharp emission is observed at 6.077 eV and attri...
Coupled density–volume and solid–liquid interaction effects in the freezing dynamics of water droplets
When a water droplet freezes, its transformation is far more complex than a simple volumetric expansion. Rather than expanding smoothly, the coupled dynamics of phase change and interfacial stress can...
Optimizing optical properties of bilayer PtSe2: The role of twist angle and hydrostatic pressure
Two-dimensional van der Waals materials offer exceptional tunability in their electronic properties. In this paper, we explore how twisting and hydrostatic pressure can be leveraged to engineer the el...
NaNbO3–BaTiO3–Ba0.93Ca0.07TiO3 ceramic composites for temperature stable X8R rated dielectrics
X7R rated dielectrics with room temperature relative permittivity (εr) of ∼2000 are produced as ceramic–ceramic composites based on a ferroelectric BaTiO3 matrix (BT, Curie Temperature, Tc = 122 °C) a...
Shortwave frequency-hopping reception via a Rydberg atom-based electrically small antenna
There is an inherent trade-off in shortwave (SW) signal reception between achieving wide operational bandwidth and high radio sensitivity. Advances in SW radio reception hold significant potential for...
Unlocking inaccessible performance of the quantum refrigerator with catalysts
Quantum thermal machines offer promising platforms for exploring the fundamental limits of thermodynamics at the microscopic scale. Building on majorization theory, we further extend the catalytic con...
AlScN ferroelectric modulates quantum transport in AlGaN/GaN two-dimensional electron gas
GaN-based heterojunction two-dimensional electron gas (2DEG) plays a significant role in high-speed microelectronics, high-efficiency photodetectors, and spintronic devices. The integration of wurtzit...
Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped <i>β</i> -Ga2O3
The development of high-performance β-Ga2O3 electronics is critically hindered by the fundamental limitation of self-compensation in n-type doping, which severely suppresses free carrier concentration...