Applied Physics Letters
Articles in this Issue
High-power and efficient operation of Ho:Lu2O3 ceramic laser at 2.1 <b> <i>μ</i> </b> m spectral gain region
We report on the power scaling and high-efficiency operation of a Ho:Lu2O3 ceramic laser at 2.1 μm in-band pumped by a high-power, narrow-linewidth Tm-doped fiber laser at 1942 nm. The 0.5 at. % Ho3+-...
Phthalocyanine-based molecular memristor consisting of a tin-bridged heterojunction
Molecular memristive devices are attractive for nanoscale memory and logic because their resistance can be modulated and retained through electrically addressable molecular states. Herein, we design a...
Ge content compromise to the performance optimization of GexAsySez OTS materials for selector applications
Germanium is a critical dopant in ovonic threshold switching (OTS) selectors, yet how its concentration influences the performance and failure mechanisms of Ge–As–Se-based OTS materials remains poorly...
Regulation of vacancy formation in h-BN via carbon doping toward improved resistive switching
Hexagonal boron nitride (h-BN) exhibits promising potential in resistive switching (RS) applications, yet the performance variability remains a major obstacle, primarily due to the uncontrollable natu...
Deep learning-based prediction of highly efficient optical probes for two-photon fluorescence imaging and photodynamic therapy of tumor
This study reports an innovative intelligent screening strategy based on a directed message-passing neural network (DMPNN) to predict two key physical properties of corrole molecule probes involving t...
Diverse ratio of electronic and internal-strain piezoelectricity in half-Heusler semiconductor for the design of multifunctional piezoelectric devices
Half-Heusler (HH) semiconductors are promising for piezoelectric applications owing to their non-centrosymmetric structures and thermal stability, but the corresponding piezoelectric mechanisms and at...
Regrown n++-GaN ohmic contacts to high-Al content AlxGa1−xN (x &gt; 0.6) digital alloy channels using AlN/GaN short-period superlattice
In this paper, we report a novel ohmic contact formation scheme for extreme bandgap AlxGa1−xN (x &gt; 0.6) channel high electron mobility transistors with undoped barrier layers. Our approach cons...
High-Q short-wave mid-infrared silicon microring resonators based on foundry processes
Short-wave mid-infrared (SWMIR, 2.0–2.5 μm) photonics has diverse applications in free-space communications, LiDAR, and environmental monitoring. Silicon photonics with mature device fabrication proce...
Defect-mediated remarkable ionic conductivity in undoped nickel oxide at low temperature
Undoped nickel oxide (NiO) is conventionally known as a p-type semiconductor with dominant hole transport. However, for the first time, this study reveals an exceptionally high ionic conductivity in d...
Tailored crystal structure via Zr-chemistry in Na3V2(PO4)3 cathodes for high-performance Na-ion storage
In this work, a Zr-chemistry modulation approach is presented to precisely alter the electronic structure of Na3V2(PO4)3 (NVP) via atomic-level doping under controlled conditions. Our findings reveal...