Journal of Applied Physics
Articles in this Issue
The ScIDEP muon radiography project at the Egyptian Pyramid of Khafre
The ScIDEP Collaboration is constructing muon telescopes based on scintillator technology to investigate the internal structure of the Egyptian Pyramid of Khafre at Giza near Cairo using cosmic-ray mu...
Simulation of electric field intensification and anode wear in high-voltage pulsed x-ray sources
The electrohydrodynamic effect of tungsten anode melt microdroplet formation in the two-electrode pulsed x-ray tube, used in pulsed x-ray devices for studying fast processes, has been investigated. A...
Steady-state plasma model of an iodine-fueled Hall thruster
A time-independent, one-dimensional plasma model is proposed and used to investigate the characteristics and performance of iodine-fueled Hall thrusters. The model accounts for radial plasma-wall loss...
Self-ion implantation and structural relaxation in amorphous silicon
Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation electron microscopy has consistently observed Medium-Range...
Atomic order induced reduction of Gilbert damping constant and enhancement of half-metallicity in off-stoichiometric Co2FeGa0.5Ge0.5 Heusler alloy thin films
The development of energy-efficient spintronic devices with enhanced magnetoresistance demands materials with low Gilbert damping constant (α) and high half-metallicity. In this study, we report a ver...
A statistical study on the origin of the polarization-dependent leakage in ferroelectric aluminum scandium nitride films
The recently discovered wurtzite ferroelectrics (FEs) have been at the center of electronic materials research because of their process compatibility and remarkably high Curie temperatures (above 1100...
VIPA based high-contrast high-efficiency two-stage Brillouin imaging spectrometer using a single diffraction mask
Brillouin spectroscopy is a non-invasive method technique for visualizing the mechanical properties of biological samples with sub-micrometer resolution. However, to obtain 2D or even 3D maps, a high-...
Image reconstruction techniques in muography: A review of algorithms and physical principles
Muography utilizes the interaction characteristics of high-energy cosmic-ray muons with matter to enable non-destructive inspection and internal imaging of large-scale or shielded objects. This review...
Exploring the impact of the inverse Faraday-effect on all-optical helicity-dependent magnetization switching
All-optical helicity-dependent magnetization switching (AO-HDS) is the quickest data recording technique using only ultrashort laser pulses. FePt grains provide an ideal platform for examining the int...
Formation yield of germanium-vacancy centers in diamond upon keV ion nano-implantation and thermal annealing
Group-IV-related color centers in diamond are promising systems in the framework of solid-state quantum technologies. A key enabler for the integration of these emitters in real-world devices consists...
Schottky barrier modulation and contact properties of metal/HfS2 interface
Semiconductor properties such as Schottky barrier heights (SBHs), contact resistances, carrier mobilities, and reactivities of closed-shell transition metal dichalcogenides (TMDs) like 1T-HfS2 and SnS...
A pressure-based method for computing electron fluid flows in hybrid model for Hall-effect thrusters
An axisymmetric hybrid model solving magnetized electron flow governing equations for Hall-effect thruster plasma dynamics in the discharge channel and the near-plume region is presented, using the pr...
Process temperature dependence of sputtered MgO/<i>n</i>-type GaN metal–oxide–semiconductor capacitors
The temperature dependence of epitaxial growth of MgO on n-type (0001)-oriented GaN by radio frequency magnetron sputtering is investigated. Epitaxial growth is obtained for growth temperatures of 550...
Hall effect measurements to determine surface electronic properties of semiconductor epitaxial films
It is shown that Hall effect measurements combined with near surface charge neutrality can self-consistently determine surface electronic properties such as the surface potential ψs and the density of...
Theoretical analysis on radiation performance of magnetoelectric antennas considering eddy-current loss and quasistatic hysteresis effect
This paper proposes a theoretical model for the electromagnetic (EM) radiation of magnetoelectric (ME) antennas, considering the eddy current (EC) loss and the quasistatic hysteresis effect. It charac...
Numerical analysis of thermal-fluid characteristics of radiant manifold microchannel structure for single-phase liquid cooling in multi-heat source chips
With the continuous evolution of Moore's law, the power density brought by three-dimensional integrated packaging technology has surged. Although the microchannel heat dissipation technology can effec...
The surge failure mechanisms of 1200-V/40-A 4H-SiC junction barrier Schottky diodes with various epilayer defects
The surge reliability and failure mechanisms of 1200-V/40-A 4H-SiC junction barrier Schottky diodes with different epilayer defect types have been studied in depth. Under 2500 surge current cycles wit...
Ferroelectric nanosheet FET with surrounded gate for mitigating dead zone and implementing reconfigurable logic-in-memory circuit
Although a nanosheet ferroelectric field-effect transistor (FeNSFET) with the gate-all-around structure has proved to be a promising solution to enhance memory density, device performances could be gr...
The effect of nitrogen on the stability of the <i>β</i> phase in W thin films
The metastable β phase (A15 structure) of tungsten can be made by atom-by-atom deposition in the presence of impurities and has unique properties of interest for use in microelectronic and other devic...
Theoretical exploration of the multifunctional applications of Sc2CT2 (T = F, O) MXenes: p–n junction diodes, field effect transistors, and phototransistors
This study systematically examines the electronic and mechanical properties of two-dimensional MXene Sc2CT2 (T = F, O) monolayers and investigates the electronic transport and optoelectronic propertie...
Defect levels and self-compensation in iodine-doped CdTe single crystals
This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photolumin...
Plasma decay and energy coupling of femtosecond laser-induced plasma filaments in N2–O2 mixtures
In this work, the decay of femtosecond laser-induced plasmas has been explored through both experimental and numerical studies. Understanding the plasma decay in different gas compositions at varying...
Local chemical order in CrFeCoNiPd high entropy alloys
High-entropy alloys (HEAs) have attracted considerable attention in recent years due to their exceptional mechanical and physical properties. However, the existence of local chemical order (LCO) in th...
High-performance tunable and switchable THz metasurface with ultra-wideband from 0.3 to 20 THz for advanced electromagnetic applications
Although graphene-based tunable broadband terahertz (THz) absorbers have attracted considerable interest, further study is required to improve their functionality for versatility in diverse applicatio...
Enhanced interfacial stability of GaN on SiC through contact orientation and layer tilting
Gallium nitride (GaN) is typically grown on silicon carbide (SiC) or silicon (Si) substrates to form GaN-on-SiC or GaN-on-Si heterostructures; however, these systems often face fabrication challenges...