Journal of Applied Physics

Vol. 139, Issue 1 Issue 1 2026
54
Articles

Articles in this Issue

Crystallization dynamics of Ge in In/Ge bilayer films under swift heavy ion irradiation: Experimental and density functional theory studies

Topeswar Meher, Anshu Dewangan, Bharti Chandrakar et al. Jan 07, 2026 10.1063/5.0295984

Indium (In) metal induced crystallization (MIC) of a-Ge in In/poorly crystalline-Ge bilayer thin films under 120 MeV Ni7+ swift heavy ion (SHI) irradiation at different fluences of 1 × 1011, 5 × 1011,...

Zonal multi-shear amount fusion wavefront reconstruction for lateral shearing interferometry in aspheric surface measurement

Bei Zhou, Ailing Tian, Hongjun Wang et al. Jan 07, 2026 10.1063/5.0304491

In lateral shearing interferometry for aspheric surface measurement, the nonuniform fringe density distribution caused by zonal curvature variations degrades wavefront reconstruction accuracy. To addr...

Probing multiphonon luminescence bands in Eu2+-doped thiogallate phosphors via spectral moments approach

Boris Tsukerblat, Mihail Nazarov, Andrew Palii Jan 07, 2026 10.1063/5.0302954

Although the method of spectral moments offers unique insight into electron–phonon interactions in activated crystals, it has not been sufficiently exploited to date. Here, we use the spectral distrib...

Observation and characterization of periodic structure formation in dielectric breakdown channels of electron-irradiated polymethyl methacrylate

Nick R. Schwartz, Bryson C. Clifford, Carolyn Chun et al. Jan 07, 2026 10.1063/5.0308472

Dielectric breakdown of insulators is a common failure mode in high-radiation environments and could be used for novel materials processing, but the mechanisms governing channel formation remain poorl...

Tuning the electronic structure of GaN through F/B doping for enhanced Na/K storage: A DFT-based exploration

Yuda Lin, Rongfang Hu Jan 07, 2026 10.1063/5.0308498

This study focuses on enhancing the intrinsic electron conductivity of GaN. An innovative approach employing F and B atomic doping strategies was adopted to construct two modified structures, that is,...

Optimizing the upconversion photoluminescence of Er–Nb co-doped Bi4Ti3O12 ceramics by Ti divacancy defects

H. R. Cheng, Y. W. Chen, Y. H. Li et al. Jan 07, 2026 10.1063/5.0303492

To optimize the upconversion photoluminescence (UCPL) performance of rare-earth doped Bi4Ti3O12 Aurivillius-phase ceramics, it is critical to reveal the microstructure-property relationship. In this w...

Stress-induced ductile-to-brittle transition of metallic materials: Atomistic simulations and a unified criterion

Xiaotao Li, Jiapeng Hou, Zhan Qu et al. Jan 07, 2026 10.1063/5.0299982

Existing ductile-to-brittle transition (DBT) criteria often fail to account for the combined effects of stress states and intrinsic material parameters, which are two crucial factors governing failure...

Metal-insulator transition and charge transport mechanisms in SnSe2 field-effect transistor

Aarti Lakhara, Lars Thole, Rolf J. Haug et al. Jan 07, 2026 10.1063/5.0291814

We report an observation of metal-insulator transition in a thin film of SnSe2. The room-temperature carrier concentration of the SnSe2 film was increased by electrostatic doping to 1.14×1013cm−2. A c...

Magnetic tunnel junction as a real-time entropy source: Field-Programmable Gate Array based random bit generation without post-processing

Troy Criss, Ahmed Sidi El Valli, Naomi Li et al. Jan 07, 2026 10.1063/5.0308636

We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that st...

Remanence evaluation of silicon steel sheets based on maximum irreversible differential magnetization

Long Chen, Long Wu, Tong Ben et al. Jan 07, 2026 10.1063/5.0283839

Due to the hysteresis phenomenon of ferromagnetic materials, an unknown remanence BR will be generated after the material is disconnected from the power supply, which can cause a considerable inrush c...

Laser-microstructured piezocapacitive system: A wireless platform for quantitative assessment of wound flatness

Yongqing Wang, Haoyu Li, Huicong Du et al. Jan 07, 2026 10.1063/5.0301503

Postoperative wound management is a critical determinant of recovery in plastic surgery and burn care, where accurate assessment of wound flatness plays a central role. Yet, current evaluation remains...

Revealing secondary particle signatures in muography based on the point of closest approach algorithm

Rongfeng Zhang, Zibo Qin, Cheng-en Liu et al. Jan 07, 2026 10.1063/5.0288322

This work reinterprets so-called “noise” in cosmic-ray imaging, indicating that the data of reconstructed Points of Closest Approach (PoCA points) outside the volume of interest defined by traditional...

At wavelength metrology of high-reflectance multilayer mirror in the water window

Franck Delmotte, Evgueni Meltchakov, Andrey Sokolov et al. Jan 07, 2026 10.1063/5.0310891

Multilayer mirrors for the water window spectral range (photon energies from 284 to 543 eV, which correspond, respectively, to the C–K and O–K absorption edges) have become key components for microsco...

Reflection amplitude shape-based approach for low-cost permittivity measurement

Zijing Wang, Yuqi Chen, Shilie Zheng et al. Jan 07, 2026 10.1063/5.0304979

The permittivity measurement is important for the characterization of material properties in various applications. Traditional methods, such as the well-known Nicolson–Ross–Weir (NRW) technique, usual...

Structure evaluation of the Ni3GaAs reaction layer formed on a GaAs(001) substrate using transmission electron microscopy

Koichiro Nishizawa, Ayumu Matsumoto, Takayuki Hisaka et al. Jan 07, 2026 10.1063/5.0303269

In gallium arsenide (GaAs) semiconductor devices, wafer warpage caused by backside electrode stress complicates wafer handling during subsequent processing and affects device characteristics. Warpage...

Effects of defects on thermal transport across solid/solid heterogeneous interfaces

Ershuai Yin, Wenzhu Luo, Lei Wang et al. Jan 07, 2026 10.1063/5.0300362

During the fabrication of heterogeneous structures inside chips, impurities and defects are inevitably introduced. However, the mechanism by which defects affect interfacial heat transport remains unc...

Emergence of anomalous magnetoresistance at low temperatures in Co/Cu nanomultilayers

Xuan Yang, Yudong Zhang, Xin Gao et al. Jan 07, 2026 10.1063/5.0306955

Magnetic nanomultilayers are promising for spintronic applications owing to their strong response to external stimuli, yet the temperature dependence of their magnetoresistance remains insufficiently...

Thermodynamic framework for nanostructure pattern formation in thin epitaxial films grown on pit-patterned semiconductor substrates

Omeet N. Patel, Ashish Kumar, Dimitrios Maroudas Jan 07, 2026 10.1063/5.0306501

We present a comprehensive study of nanostructure pattern formation on coherently strained epitaxial thin films grown on crystalline semiconductor substrates patterned with periodic arrays of inverted...

Topological phase transition with tunable orbital Hall effect in two-dimensional ferromagnet SVSiN2

Jiatong Li, Zhiqi Chen, Baibiao Huang et al. Jan 07, 2026 10.1063/5.0310025

We theoretically show the switching between topologically nontrivial phases characterized by different bulk-boundary correspondences and, in particular, establish the intrinsic coupling between band t...

Response to “Comment on ‘Influence of layer thickness on time domain Brillouin scattering oscillation amplitude in multilayer films”’ [J. Appl. Phys. 136, 225302 (2024)]

Enrui Zhang, HongYuan Zhao, Zhiming Geng et al. Jan 07, 2026 10.1063/5.0304188

Effective dipole extraction from noisy magnetic field image data using deep convolutional neural networks

Jacob Feinstein, Srisaranya Pujari, Raisa Trubko Jan 07, 2026 10.1063/5.0299028

Quantum sensors such as Nitrogen-Vacancy (NV) centers in diamond image magnetic fields with high spatial resolution, making them a powerful tool in characterizing a variety of magnetic samples. Howeve...

Hyperdoping SiGe with S using ion implantation and pulsed laser melting for infrared absorption and detection

J. Mathews, D. Hutchinson, Y. Liu et al. Jan 07, 2026 10.1063/5.0304780

Hyperdoping of Si has been demonstrated to induce sub-bandgap absorption through the formation of intermediate bands (IBs). In this work, a p-type SiGe film with 16% Ge grown on Si was hyperdoped with...

Comment on “Influence of layer thickness on time domain Brillouin scattering oscillation amplitude in multilayer films” [J. Appl. Phys. 136, 225302 (2024)]

Simon Ayrinhac, Arnaud Devos, Benoît Rufflé et al. Jan 07, 2026 10.1063/5.0284277

Thermal impedance in pulsed energy storage systems with phase change materials

Juan C. Lago, Veronica Gonzalez Fernandez, Alison Hoe et al. Jan 07, 2026 10.1063/5.0304273

Phase change materials (PCMs) have tremendous capacity as passive components to recover and repurpose thermal energy from transient power systems. However, PCMs are only effective if the time scale of...

Modulating the structural and band-structure properties of double-walled silicon nanotubes for possible photocatalytic applications

Luyu Zhou, Quan Xie, Sili Huang et al. Jan 07, 2026 10.1063/5.0304958

Silicon nanotubes (SiNTs) exhibit carbon nanotube-like structures and hold great potential for application in microelectronics and photocatalysis. However, their practical implementation is limited by...

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Journal Info

Publisher American Institute of Physics
ISSN 0021-8979
E-ISSN 1089-7550
Subject Physical Sciences
Language English
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