Journal of Applied Physics
Articles in this Issue
Ultrafast performance of the gamma-ray detection system with a diode laser
Reaction history measurements are fundamental components of diagnosing inertial confinement fusion (ICF) implosions, which require implementation and development on measuring fusion gamma rays. A new...
Growth of nanostructured tungsten using pulsed direct current and bipolar high power impulse magnetron sputtering systems
Nanostructured tungsten (W) has been studied for the first time in pulsed direct current (DC) and bipolar-high power impulse-magnetron sputtering (HiPIMS) systems operating in helium (He). In pulsed D...
Impact of ultrafast laser pulse repetition rate on filament acoustic and emission signatures
Femtosecond filaments formed at standoff distances can be used for interrogating various types of matter, making them of potential interest for remote sensing. However, the physical aspects of the fil...
<i>α</i> / <i>G</i> figure of merit for infrared photodetector materials
In the last 20 years, we have witnessed enormous technological nanofabrication progress in the development of a new generation of infrared photodetectors. In this broad class of photodetectors, genera...
Ultraviolet-photon emitted GeO2/Ge quantum dots fabricated using hot Ge+-ion implantation into SiO2 layer
Using simple hot Ge+-ion implantation into an SiO2 layer at a substrate temperature T, followed by post-N2 annealing at 850 °C for an annealing time tN, we successfully fabricated GeO2/Ge quantum dots...
The effect of composition on helium bubble nucleation in complex concentrated alloys
Molecular dynamics simulations of helium implantation have been performed in the MoNbTaTi complex concentrated alloy (CCA) to determine the impact of composition on helium clustering and bubble nuclea...
Evaluation of current density measurement methods for high-current, low-beta electron beams
Recent current density measurements with a low-beta electron beam (β=0.5-0.75) are strongly affected by electron scatter and Cherenkov limits. These invasive measurements are heavily influenced by the...
Thermal conductivity of SiO2 grown by plasma enhanced chemical vapor deposition
SiO2 is a crucial material in silicon-based semiconductor devices, where efficient thermal management is essential. Reliable thermal conductivity for SiO2 grown by plasma enhanced chemical vapor depos...
Composition effects on Ni/Al reactive multilayers: A comprehensive study of mechanical properties, reaction dynamics, and phase evolution
Ni/Al reactive multilayers are promising materials for applications requiring controlled local energy release and superior mechanical performance. This study systematically investigates the impact of...
Acquisition method for effective electromagnetic parameters of honeycomb structures based on FNN–INN
The effective electromagnetic parameters of honeycomb composite structures are crucial for studying their electromagnetic properties. However, most existing homogenization methods are based on static...
Lattice recovery and microstructural defects in thermally annealed phosphorous and aluminum implanted (0001) 4H-SiC
We report on the lattice strain and crystal defects generated in thermally annealed phosphorus and aluminum implanted (0001) 4° off-axis oriented homoepitaxial (0001)-4H-SiC (ion energy range between...
Surface acoustic wave amplification in narrow graphene nanoribbons under a dc electric field
The paper analyzes the amplification of surface acoustic waves (SAWs) in narrow graphene nanoribbons (GNRs) under the action of a dc electric field, which causes the drift of free charge carriers in t...
Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches
This study investigated the failure mechanism of a series-connected structured photoconductive semiconductor switches (PCSSs) made of vanadium-doped 4H-SiC. For a long time, SiC PCSSs have face reliab...
Particle-in-cell simulation on breakdown characteristics between bus-bars under circuit breaker interruption conditions in low voltage switchgear
The interruption process of circuit breakers in low-voltage switchgear always results in the formation of high-temperature gas, and the high-temperature gas will be emitted to the bus-bar terminals, w...
Theoretical investigation of preparation pathways that enhance the equilibrium yield of negatively ionized tin-vacancy centers in N-doped diamond
The elucidation of the mechanism of SnV− formation in diamond is especially important as the SnV− color center has the potential to be a superior single-photon emitter when compared to the NV and to o...
Low-dimensional quantum antiferromagnetism in frustrated potassium 3<i>d</i> transition metal (II) phosphates: Insights from experimental and first-principles investigations
Anhydrous phosphate compounds based on 3d transition metal ions can exhibit rich physical behaviors in fundamental condensed matter physics. Herein, we report the structures and low-dimensional quantu...
Temperature dependence of deep level positions and capture cross sections in vanadium-doped 4H-SiC
4H-SiC has emerged as a crucial semiconductor material for power electronic devices due to its superior physical properties, including high breakdown field, electron saturation drift velocity, and the...
Shock-induced chemical reaction of Al/Ni composites subjected to hypervelocity impact: Experimental work and numerical simulation
This study aims to enhance the understanding of the energy release behavior and reaction characteristics of Al/Ni composites under hypervelocity impact. The Al/Ni composites with a molar ratio of 1:1...
Electric field-tuning plasmon and coupled plasmon–phonon modes in monolayer transition metal dichalcogenides
We theoretically investigate the electric field-tuning plasmons and plasmon–phonon couplings of two-dimensional (2D) transition metal dichalcogenides (TMDs), such as monolayer MoS2, under the consider...
Sheath transitions in a cylindrical filament discharge: Axisymmetric 1D3V PIC-MCC simulations
We present the first nonplanar hot cathode discharge simulations that capture the role of the trapped-ions plasma, elucidating new phenomena unobservable in planar geometric discharges. A discharge st...
Dislocation analysis in p-type 4H-SiC: Etching morphologies and electronic properties
As the foundational material for high-voltage n-channel Insulated Gate Bipolar Transistors (IGBTs), p-type 4H silicon carbide (4H-SiC) substrates lack comprehensive analysis of dislocations. This stud...
3D kinetic Monte Carlo-based investigation of the influence of dopants on the reliability of VCM ReRAM
Variability and retention are critical reliability challenges for redox-based resistive switching random access memory (ReRAM) devices operating via the valence change mechanism (VCM). Variability ari...
Shock initiation sensitivity studies of low-density pressed and thermally damaged polymer bonded explosive (PBX) 9501
Understanding the initiation sensitivity of high explosives that have been damaged through mechanical or thermal insults is important to safely handling the material. The shock initiation sensitivity...
Effect of radio frequency bias on the ion extraction from high-density electropositive plasmas
Modern industry heavily relies on inductively coupled plasmas for the generation of energetic ions. In electric propulsion, these ions generate thrust. In the semiconductor industry, they are used to...
Simulation of membrane-assisted electroseparation of binary suspension
A two-dimensional Monte Carlo model for a description of electroseparation of a binary suspension of small and big particles placed between two membranes is developed. It is assumed that the membranes...