Journal of Applied Physics

Vol. 140, Issue 2 Issue 2 2026
27
Articles

Articles in this Issue

Optical response in spintronic Poisson bolometers

Ziyi Yang, Sakshi Gupta, Jehan Shalabi et al. Jul 14, 2026 10.1063/5.0318323

Analog bolometers based on temperature-dependent phase-transition materials such as vanadium oxide and barium titanate represent the state of the art in uncooled infrared detectors. Recently, the firs...

Laser shock loading of carbon nanotube and ceria polyurea composites

Shane L. McPherson, Christine C. Roberts, Jessica W. Kopatz et al. Jul 14, 2026 10.1063/5.0325088

A series of Versalink® P1000 and Mondur CD (polymers of approximately 1000 amu) polyurea samples were loaded with ceria (CeO2) nanoparticles and carbon nanotubes (CNTs), shocked using direct laser imp...

Magneto-transport and spin-reorientation in Pt/Co78Ho22 heterostructures near the sublattice compensation temperature

Rajeev Nepal, Jose Flores, Aurain Seaton et al. Jul 14, 2026 10.1063/5.0330429

Metallic amorphous ferrimagnets of 3d transition metals (TMs) and rare earths (REs) with 4f electrons exhibit rich magneto-transport behavior due to the interplay between the 3d and 4f magnetic sublat...

Generation and characterization of extended-length dislocations in BiSb alloys

S. Frisone, M. Choi, J. Essman et al. Jul 14, 2026 10.1063/5.0318572

Narrow bandgap semiconducting Bi–Sb alloys with ∼10 at. % Sb were recently identified as strong topological insulators with non-trivial weak indices. Consequently, topologically-protected conduction i...

Attention-based explainability for structure–property relationships

Boris N. Slautin, Utkarsh Pratiush, Yongtao Liu et al. Jul 14, 2026 10.1063/5.0314260

Machine learning methods are emerging as a universal paradigm for constructing correlative structure–property relationships in materials science based on multimodal characterization. However, this nec...

Reconfigurable silicon photonics extreme learning machine with random non-linearities as neural processor and physical unclonable function

George Sarantoglou, Georgios Aias Karydis, Adonis Bogris et al. Jul 14, 2026 10.1063/5.0318894

We propose RN (reservoir computing)-ELM, an extreme learning machine in which the conventional architecture—fixed random linear synapses followed by a uniform activation function—is replaced by an arr...

Promising thermoelectric transport properties of new <i>γ</i> -SnSe single crystals with full <i>ab initio</i> calculations

Lingyun Ye, Pingping Wang, Ya-Nan Lyu et al. Jul 14, 2026 10.1063/5.0328127

α- and β-SnSe have emerged as promising thermoelectric materials owing to their excellent performance. Recently, a new phase, γ-SnSe, has been identified, offering new opportunities for thermoelectric...

Muography: Discoveries, innovations, and applications

JungHyun Bae, Konstantin Borozdin, Adam Hecht et al. Jul 14, 2026 10.1063/5.0346450

Ru alloying in Ni/Al reactive multilayers: Experimental observations and molecular dynamics simulations

Nensi Toncich, Ankit Yadav, Jan Fikar et al. Jul 14, 2026 10.1063/5.0338546

Reactive multilayer thin films, a class of energetic materials, are increasingly recognized for their potential in joining applications, utilizing the chemical energy released as heat during exothermi...

Predominant contributions of doubly and triply excited atomic states to the radiative opacity of Gd plasmas

Guang Yang, Wen Yan, Yong Hou et al. Jul 14, 2026 10.1063/5.0326724

A large-scale configuration-interaction calculation is performed for Gd18+ and nearby ionization stages using a multi-configuration Dirac–Hartree–Fock method. Multiply excited configurations up to qua...

Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors

J. Liu, T. Teraji Jul 14, 2026 10.1063/5.0318837

Electrical characteristics of boron-doped diamond (B-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) fabricated on an epitaxial layer with a thickness (tboron) of 1514 nm and a b...

Uniaxially oriented Te/SexTe1−x van der Waals heterojunction nanowire arrays grown by molecular beam epitaxy

Yu He, Shuhui Li, Xinyao Liu et al. Jul 14, 2026 10.1063/5.0325659

Elemental tellurium (Te), with chiral atom chains held together by van der Waals (vdW) force, has recently gained significant attention due to its intriguing physical properties. However, the controll...

Analysis of the film thickness dependence of the ferroelectric properties of epitaxial PMN–PT thin films on a thin PZT interfacial layer

M. Boota, E. P. Houwman, G. Lanzara et al. Jul 14, 2026 10.1063/5.0337548

Perovskite phase-pure, (001)-oriented, epitaxial [Pb(Mg1/3Nb2/3)O3]0.67–(PbTiO3)0.33 (PMN–PT) thin films with six different thicknesses in the range 100–1000 nm were deposited on single-crystal, (001)...

Exploring the impact of magnesium on the electronic properties of chromium–aluminium oxides (Al <i>x</i> Cr1− <i>x</i> )2O3 for high-temperature thermal energy storage applications

Ibrahim Isah, Donald Smith, Michael Chon et al. Jul 14, 2026 10.1063/5.0324004

This study investigates the influence of magnesium (Mg) incorporation on the electronic properties of the (AlxCr1−x)2O3 system, a promising conductive material for high-temperature electrified thermal...

A fast and accurate reduced-order model for high-intensity transferred arc discharges

Sai Vishnu Korsipati, Hariswaran Sitaraman, Laxminarayan Raja Jul 14, 2026 10.1063/5.0333187

Arc discharges are widely used in welding, plasma smelting, and other industrial processes, where variations in operating conditions strongly affect arc stability, temperature distribution, and energy...

Activation study on Ge-implanted gallium nitride and its usage in dopant-selective nanoporous electrochemical etching

Matthias Hoormann, Frederik Lüßmann, Christoph Margenfeld et al. Jul 14, 2026 10.1063/5.0321018

Porosification of high n-doped GaN by electrochemical etching allows us to modify its refractive index drastically. For optoelectronic applications, lateral control of the doping profile is necessary....

Non-polar <i>a-</i> plane UV emission from GaN micropillar arrays for UV devices

Houssein Mohaidly, Lucas Jaloustre, Saron R. S. De Mello et al. Jul 14, 2026 10.1063/5.0327414

This work reports the UV-B emitters based on a-plane core–shell GaN/AlGaN micropillar arrays. Using high-aspect-ratio a-faceted GaN micropillars fabricated via top-down etching as templates, we perfor...

Design and characteristic analysis of a novel flexible rod-based multi-directional piezoelectric vibration energy harvester

Junling Chai, Jinqin Tang, Shijie Lin et al. Jul 14, 2026 10.1063/5.0331487

The piezoelectric vibration energy harvesters (PVEHs) are promising for powering wireless sensors in vibration environments. Conventional PVEHs show limited directionality and low reliability—simple g...

Formation and texture of ScSi from Sc thin films deposited on Si substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert et al. Jul 14, 2026 10.1063/5.0335971

Scandium (Sc) silicides, formed through solid-state reactions between thin Sc films and Si, have recently gained attention for their potential in low-resistance metal/semiconductor contacts. In this w...

Magneto-optical conductivity of epitaxial graphene modulated by external fields

Muhammad Noman, Kashif Sabeeh, Muzamil Shah Jul 14, 2026 10.1063/5.0333848

We theoretically investigate the magneto-optical transport properties of epitaxial graphene subjected to a perpendicular magnetic field combined with substrate-induced electric and antiferromagnetic e...

Phonon radiation mechanism of electromagnetic wave in piezoelectric resonators

Lu Cao, Huijiadai Luo, Fangzhe Li et al. Jul 14, 2026 10.1063/5.0332962

Piezoelectric mechanical antennas, whose core components are piezoelectric resonators, present disruptive potential as a promising alternative of traditional electric antennas for long-distance, under...

Dual-mode infrared detection via photovoltaic and barrier pyroelectric effects in PbTe <i>p</i> – <i>n</i> junctions

Albert Jarashneli, Danil Kobtsev, Alexander Upcher et al. Jul 14, 2026 10.1063/5.0333930

In the work, two effects appeared in PbTe p–n junctions under mid-wavelength infrared (2 − 5 μm) and long-wavelength infrared irradiation (≈10.6 μm). The first effect was created by the optical absorp...

An open-source framework for quantitative electrostatic simulations in Kelvin probe force microscopy

Nobuyuki Ishida Jul 14, 2026 10.1063/5.0336722

We developed an open-source numerical code for calculating electrostatic interactions between a hyperbolic metallic tip and a conducting surface under Kelvin probe force microscopy (KPFM)-relevant con...

Effect of nitrogen atmosphere and vacuum conditions on charge dynamics in mesoscale porous silicon

Puskar R. Chapagain, Petra Granitzer, Klemens Rumpf et al. Jul 14, 2026 10.1063/5.0334230

Optoelectronic properties of nano- and mesoscale porous silicon (PS) are strongly influenced by surface effects, owing to intrinsic and extrinsic electronic states within the bandgap. In addition, phy...

Atomistic simulation of the bending stiffness of sp2 and sp3 hybridized carbon sheets

Jean-Marc Leyssale, Fabrice Piazza, Pascal Puech Jul 14, 2026 10.1063/5.0333587

The bending stiffness of two-dimensional materials is a fundamental property governing their mechanical stability and performance in flexible electronic devices. In the case of carbon-based two-dimens...

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Journal Info

Publisher American Institute of Physics
ISSN 0021-8979
E-ISSN 1089-7550
Subject Physical Sciences
Language English
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