Applied Physics Letters

Vol. 127, Issue 11 Issue 11 2025
55
Articles

Articles in this Issue

Interfacial charge transfer engineering in S-ZIF-L@MIL-53/NF heterostructures for enhanced oxygen evolution kinetics

Yanqi Li, Guoxun Cai, Wenjun Shi et al. Sep 15, 2025 10.1063/5.0291007

The development of cost-effective and efficient electrocatalysts for the oxygen evolution reaction (OER) is critical for advancing sustainable hydrogen production via water electrolysis. Herein, an in...

High-throughput discovery of surface-functionalized MXenes for photocatalytic water splitting via integrated machine learning and DFT screening

Heng Ni, Hegui Liu, Yijun Zhang et al. Sep 15, 2025 10.1063/5.0288263

MXenes, as highly promising two-dimensional (2D) materials, have attracted significant attention in the field of photocatalytic water splitting. However, the enormous diversity of material structures...

Synergistic effect of fermi level modulation and valence band regulation in mohite Cu2SnS3 for thermoelectric applications

Parvathi Krishna, V. Vijay, C. Kanagaraj et al. Sep 15, 2025 10.1063/5.0283942

The p-type Cu2SnS3 compounds have been experimentally identified as a promising thermoelectric material. Here, we demonstrate the p-type nature of mohite Cu2SnS3 using experimental techniques as well...

Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs

Jin-Long Li, Qing Zhu, Yi-Lin Chen et al. Sep 15, 2025 10.1063/5.0282034

This study proposes a hybrid ultraviolet (UV) electrical characterization method for the precise evaluation of channel temperature (Tch) and thermal resistance (Rth) in gallium nitride-based high elec...

Degradation of on-current in 4 kV <i>β</i>-Ga2O3 trench Schottky barrier diodes under high voltage step stressing

Aditya K. Bhat, Sai Charan Vanjari, Matthew D. Smith et al. Sep 15, 2025 10.1063/5.0278110

Reliability of β-Ga2O3 based trench Schottky barrier diodes with a breakdown voltage of 4 kV and a Baliga's figure of merit of ∼1 GW/cm2 is reported. The devices were stressed with reverse voltages up...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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