Applied Physics Letters
Articles in this Issue
Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects
High-mobility normally-off field-effect transistors (FETs) based on hexagonal boron nitride (h-BN)/hydrogen-terminated diamond (H-diamond) heterostructures and two-dimensional hole gas (2DHG) demonstr...
Strain-driven interfacial engineering in metal–MoS2 contacts
We investigate strain engineering in single-layer MoS2–Au heterostructures under biaxial and uniaxial tension applied along the zigzag and armchair directions. By systematically varying the strain con...
High-resolution visualization of sidewall defects in gallium nitride micro light-emitting diode via multi-physical field luminescence imaging microscopy
Localization and characterization of defects are particularly critical for optimizing the performance of a gallium nitride (GaN) micro light-emitting diode (Micro LED). In this work, we develop a mult...
Nonvolatile resistance switching in <i>h</i>-BN by van der Waals ferroelectric engineering
The metallization of hexagonal boron nitride (h-BN) monolayer with a wide bandgap is crucial for unlocking its potential in various fields. Although carrier doping is the most straightforward way for...
Substrate effects on phase formation and interfacial stability in superconducting vanadium silicide thin films
Thin films of vanadium silicide (V-silicide) in the A15 cubic phase (V3Si) are promising for superconducting quantum devices due to their high transition temperature and potential compatibility with s...