Applied Physics Letters
Articles in this Issue
Synergistic dual built-in electric fields and HfO2 band engineering for self-powered solar-blind UV detectors on silicon
Hafnium oxide (HfO2), renowned for its high dielectric constant and excellent CMOS process compatibility, is a cornerstone material in logic chips. Its wide bandgap and low intrinsic carrier concentra...
Fast measurement of acoustic dispersion relations based on spatiotemporal phase-contrast imaging
The laser ultrasonics phase-contrast imaging technique is introduced for spatiotemporal acoustic field imaging and quantitative analysis of acoustic dispersion. Two synchronized pulsed Nd:YAG lasers a...
Band degeneracy driven high power factor in higher manganese silicide for thermoelectric application
Higher Manganese Silicide (HMS), a p-type semiconductor that obeys the 14-th electron rule, exhibits a high Seebeck coefficient and electrical conductivity attributed to the contribution of partially...
Optimizing the microstructure of pure Te alloys with metals doping for improving thermoelectric properties
Tellurium (Te) exhibits a high Seebeck coefficient and low thermal conductivity, showing broad application prospects in medium-to-low temperature thermoelectrics. However, its low electrical conductiv...
Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
This work demonstrates a self-aligned implanted mesa termination for GaN-on-GaN vertical Schottky barrier diodes (SBDs), and studies its effects on electrical characteristics and breakdown behaviors o...
Crystal orientation dependence of extreme near-field heat transfer between polar materials governed by surface phonon modes
Due to the rapid development of micro- and nano-manufacturing and electronic devices, heat transfer at the transition regime between radiation and conduction becomes increasingly important. Recent wor...
Interfacial p-Si doped InZnO ferroelectric FET for enhanced memory window
Since abundant electrons serve as the primary carriers in n-type oxide semiconductors, dipole-induced electron repulsion is ineffective in increasing the threshold voltage (VT) of oxide channel ferroe...
Determination of the dependence of long-lived hot-carrier temperature on excitation power and its effect on the radiative decay rate in GaN/InGaN nanodisks
Quantum-confined GaN/InGaN-based heterostructures are a natural choice for light-emitting devices due to their enhanced luminescence and superior efficiency. The reduced density of states and improved...
Thermal stability of swift heavy ion tracks in <i>β</i>-Ga2O3 annealed at high temperatures
As an ultra-wide bandgap (∼4.8 eV) semiconductor, β-Ga2O3 is promising for applications in harsh environments. It is extremely resistant to low-energy ions, but is quite susceptible to swift heavy ion...
Surface engineering assisted hot electrons injection for highly sensitive plasma photodetector
The plasmonic structure, with its unique local field enhancement effect, exhibits significant potential for enhancing the photoelectric conversion efficiency of micro-nano optoelectronic devices. Howe...
Deterministic generation of a twin-Fock state of two nitrogen-vacancy ensembles via a superconducting flux qubit
The twin-Fock state plays a central role in quantum metrology and quantum information processing. Here, we propose a method to generate a twin-Fock state of two nitrogen-vacancy-center (NV) ensembles...
Generation and mechanism of a two-dimensional large-scale diffuse plume in an open air argon jet
Atmospheric pressure two-dimensional (2D) plasma jet has demonstrated its efficient performance in large-area target processing. In this study, a large-area 2D plasma jet is generated using a particul...
Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance
ScAlN, featuring bipolar switchable spontaneous polarization along with enhanced piezoelectricity and electromechanical coupling coefficients, emerges as a highly promising ultrawide bandgap semicondu...
Spin–orbit torque control via distinct exchange-coupling interfaces
Efficient manipulation of magneto-dynamics is critical for advancing nonvolatile spin memory devices, and high spin–orbit torque (SOT) efficiency enables rapid and energy-efficient magnetization switc...
Antiferroelectricity with metastable polar state from the Kittel model
We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing a comprehensive phase...
Growth and characterization of high-quality h-BN single-layer films on Si-incorporated Ni (111) via molecular beam epitaxy
Reliable synthesis of high-quality two-dimensional (2D) hexagonal boron nitride (h-BN) is essential for its implementation as a dielectric in next-generation electronics. In this study, we demonstrate...
Kerr microscopy study of magnetic domains and their dynamics in bulk Ni–Mn–Ga austenite
The observation of magnetic domains on the surface of bulk austenite Ni–Mn–Ga has been a significant challenge for many years. Using advanced Kerr microscopy, with automatic compensation of the sample...
Strain-induced competition of thermoelectric parameters in monolayer HfS2
Band convergence strategy has been widely used to improve thermoelectric performance. However, the effect of intervalley scattering caused by band convergence on the electrical and thermal properties...
Laser effect in electrically injected Tamm devices
This work demonstrates the realization of an electrically driven Tamm laser diode based on the integration of a silver microdisk with a quantum-well-embedded distributed Bragg reflector (GaAs/AlAs). T...
Type-I band offset between diamond and <i>n</i>-type Al Ga oxynitride: Possible diamond-based heterojunction for high-power and high-frequency electronic devices
In an attempt to realize diamond-based p–n heterojunctions for high-power and high-frequency electronic devices, fabrication and characterization of heterojunctions of wurtzite oxynitride of AlGaON(00...
Integrated phononic waveguide on thin-film lithium niobate on diamond
We demonstrate wavelength-scale phononic waveguides formed by transfer-printed thin-film lithium niobate (LN) on bulk diamond, a material stack that combines the strong piezoelectricity of LN with the...
NV-like defects more common than four-leaf clovers: A perspective on high-throughput point defect data
Point defect for quantum technologies is an emerging research area, with the nitrogen-vacancy (NV) center in diamond at the forefront. However, how rare are defects with NV-like properties? In this Pe...
Optical anisotropy in laterally aligned W6Te6 nanowire bundles
We report optical anisotropy in laterally aligned bundles of metallic W6Te6 nanowires, grown on a-plane sapphire substrates by chemical vapor deposition. Mueller-matrix spectroscopic ellipsometry reve...
Low-temperature synthesis of Al-rich rock salt Cr1−xAlxN films with selective metal ion bombardment by synchronized substrate bias pulsing
We demonstrate a two-stage low-temperature (&lt;100 °C) growth process for obtaining Al-rich rock salt-structured Cr1−xAlxN films by high-power impulse magnetron sputtering (HiPIMS) with synchroni...
Orbitronic terahertz emission from Mo-based nanolayers via the inverse orbital Hall and Rashba–Edelstein effects
Rapid advancements in the communications and semiconductor industries have brought about the need to move to higher operating frequencies, with the terahertz (THz) frequency band being prospected as t...