Applied Physics Letters

Vol. 128, Issue 9 Issue 9 2026

Articles

Articles in this Issue

Characteristics of photo-activated avalanche charge domain in semi-insulating GaAs photoconductive switch

Liqiang Tian, Nannan Wang, Wei Shi et al. Mar 02, 2026 10.1063/5.0315605

According to the photo-activated charge domain theoretical model, the formation characteristics of the photo-activated avalanche charge domain (PAACD) is studied based on the characteristics of the ph...

Low-field Landau-level crossings in ABA pentalayer graphene revealed by sequential plateau disappearances

Youngwoo Nam, Daewon Gu, Jaemin Lee et al. Mar 02, 2026 10.1063/5.0311033

We investigated suspended Bernal-stacked (ABA) pentalayer graphene with ultralow disorder and observed well-defined quantum Hall plateaus and Landau-level crossings at magnetic fields below 2 T. As th...

Optimization of bias stability in an interferometric fiber optic gyroscope via optical switch modulation

Jinjiang Xu, Feiyu Yao, Jie Zhao et al. Mar 02, 2026 10.1063/5.0313770

We demonstrate an interferometric fiber optic gyroscope (IFOG) driven by an amplified spontaneous emission laser source, incorporating optical switch to reduce slowly varying errors and enhance stabil...

Structural and electrical characterization of homoepitaxial (1¯02) <b> <i>β</i> </b> -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and emission microscopy

Sayleap Sdoeung, Kohei Sasaki, Chia-Hung Lin et al. Mar 02, 2026 10.1063/5.0316096

This study demonstrates that (1¯02) β-Ga2O3 is a promising candidate for homoepitaxial growth via halide vapor phase epitaxy. Synchrotron x-ray rocking curve measurements confirmed a uniform full-widt...

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Journal Info

Publisher American Institute of Physics

ISSN 0003-6951

E-ISSN 1077-3118

Subject Physical Sciences

Language English

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