Analysis of the film thickness dependence of the ferroelectric properties of epitaxial PMN–PT thin films on a thin PZT interfacial layer

M M. Boota (MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,) E E. P. Houwman (MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,) G G. Lanzara (Engineering Department, University of Rome “ROMA TRE,” 2 Via Della Vasca Navale 79, 00146 Rome,) E E. Bemporad (Engineering Department, University of Rome “ROMA TRE,” 2 Via Della Vasca Navale 79, 00146 Rome,) G G. Koster (MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,) G G. Rijnders (MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,)

Abstract

Perovskite phase-pure, (001)-oriented, epitaxial [Pb(Mg1/3Nb2/3)O3]0.67–(PbTiO3)0.33 (PMN–PT) thin films with six different thicknesses in the range 100–1000 nm were deposited on single-crystal, (001)-oriented SrTiO3 substrates on a 25 nm Pb(Zr0.5Ti0.5)O3 interfacial layer. The measured ferroelectric, dielectric, and piezoelectric property values of parallel-plate capacitor structures increase with PMN–PT layer thickness. This is explained by increasing local polarization further away from the substrate, which is deduced from the properties of the thickness series. The polarization change is explained by strain relaxation with increasing thickness and also indicates a symmetry change from rhombohedral to tetragonal symmetry above a thickness of 800 nm. This correlates with an earlier found abrupt change of Young's modulus and hardness.

Article Details

Volume / Issue Vol. 140, Issue 2
Published July 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

M

M. Boota

MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,

E

E. P. Houwman

MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,

G

G. Lanzara

Engineering Department, University of Rome “ROMA TRE,” 2 Via Della Vasca Navale 79, 00146 Rome,

E

E. Bemporad

Engineering Department, University of Rome “ROMA TRE,” 2 Via Della Vasca Navale 79, 00146 Rome,

G

G. Koster

MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,

G

G. Rijnders

MESA+ Institute for Nanotechnology, University of Twente 1 , P.O. Box 217, Enschede 7500AE,