Optimizing the upconversion photoluminescence of Er–Nb co-doped Bi4Ti3O12 ceramics by Ti divacancy defects

H H. R. Cheng (State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,) Y Y. W. Chen (State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,) Y Y. H. Li (State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,) J J. D. Liu (State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,) B B. J. Ye (State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,)

Abstract

To optimize the upconversion photoluminescence (UCPL) performance of rare-earth doped Bi4Ti3O12 Aurivillius-phase ceramics, it is critical to reveal the microstructure-property relationship. In this work, Er and Nb co-doped Bi3.7Er0.3NbyTi3−yO12 (y=0,0.01,0.02,0.04,0.06) ceramics were synthesized via a solid-state reaction. The x-ray diffraction analysis confirmed their phase-pure orthorhombic without a secondary phase. Compared to Bi3.7Er0.3Ti3O12, the intensities of 528 and 661 nm emission peaks of UCPL spectra for Bi3.7Er0.3Nb0.02Ti2.98O12 are 2.5 and 2.2 times increased, respectively. Experimental and theoretical calculation results of positron annihilation lifetime spectroscopy and coincidence Doppler broadening revealed the presence of VTi monovacancy and VTi–Ti divacancy defects within these ceramics. As demonstrated by the UCPL and the positron annihilation results, the enhancement of UCPL performance of Er–Nb co-doped Bi4Ti3O12 ceramics is predominantly determined by the VTi–Ti divacancy defects.

Article Details

Volume / Issue Vol. 139, Issue 1
Published January 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

H

H. R. Cheng

State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,

Y

Y. W. Chen

State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,

Y

Y. H. Li

State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,

J

J. D. Liu

State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,

B

B. J. Ye

State Key Laboratory of Particle Detection and Electronics, Department of Modern Physics, University of Science and Technology of China , Hefei 230026,