Journal of Applied Physics

Vol. 138, Issue 14 Issue 14 2025
57
Articles

Articles in this Issue

Mass use in 2  <i>μ</i> m laser-driven tin plasma using sheet targets

Y. Mostafa, L. Behnke, D. J. Engels et al. Oct 14, 2025 10.1063/5.0286647

We investigate the mass use of 2 μm wavelength laser-driven tin plasmas as formed from thin tin sheet targets, and identify a key dependence of the conversion efficiency (CE), of converting laser ligh...

High temperature sound absorption characteristics of micro-perforated plate sandwich structure based on triply periodic minimal surfaces

Xiaozhen Li, Shuaicheng Pan, Weizhuang Wu et al. Oct 14, 2025 10.1063/5.0289323

This paper presents an innovative design integrating micro-perforated plate (MPP) with P-type triply periodic minimal surfaces (TPMS) to enhance sound absorption capability, particularly at high tempe...

Influence of the GaAs substrate thickness on the photoluminescence of an InP/AlGaInP quantum dot membrane

A. Ćutuk, M. Jetter, P. Michler Oct 14, 2025 10.1063/5.0289769

Modern semiconductor device technology expands to new application fields and increasing integrability even to hybrid system approaches. Thus, membrane technologies emerge to be a new standard for ligh...

Enhancing the light output power of deep ultraviolet light-emitting diodes with a ultra-thin p-type layer through etching non-ohmic contact p-GaN region

Hualiang Qiu, Linhao Wang, Yanan Guo et al. Oct 14, 2025 10.1063/5.0291142

In this study, we employ the etching non-ohmic contact p-type region to enhance the performance of deep ultraviolet light-emitting diodes (DUV-LEDs) with ultra-thin (62 nm) p-type layers. Experimental...

Quantum filtering of hydrogen isotopes through graphene

Joshua Hale, Theja N. De Silva Oct 14, 2025 10.1063/5.0286161

Driven by the growing demand in the energy, medical, and industrial sectors, we investigate a hydrogen isotope separation technique that offers both a high separation factor and economic feasibility....

Ultraheavy boron doping of diamond by ion implantation for low-resistance layer formation: Effect of hot implantation

Kaiya Imamura, Yuhei Seki, Yasushi Hoshino Oct 14, 2025 10.1063/5.0297918

We performed heavy boron doping of diamond at high concentrations from 1019 to 1021cm−3 using ion implantation at various substrate temperatures to form a low-resistance p-type layer. This study detai...

Mechanistic role of relaxor character in pressure-driven depolarization of lead-free BNT-based ferroelectrics

Ping Peng, Long Wu, Meng Xie et al. Oct 14, 2025 10.1063/5.0292590

Bi0.5Na0.5TiO3(BNT)-based ferroelectric ceramics have emerged as promising candidates for high-power generator applications. However, the fundamental relationship between structure and pressure-induce...

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Journal Info

Publisher American Institute of Physics
ISSN 0021-8979
E-ISSN 1089-7550
Subject Physical Sciences
Language English
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